MOSFET P-Ch -20V -1.5A SOT-23-3
| Parameter Name | Attribute value |
| Maker | Infineon |
| Product Category | MOSFET |
| technology | Si |
| Installation style | SMD/SMT |
| Package/box | SOT-23-3 |
| Number of channels | 1 Channel |
| Transistor polarity | P-Channel |
| Vds - drain-source breakdown voltage | 20 V |
| Id-continuous drain current | 1.5 A |
| Rds On - drain-source on-resistance | 105 mOhms |
| Vgs th-gate-source threshold voltage | 1.2 V |
| Vgs - gate-source voltage | 12 V |
| Qg-gate charge | - 3.6 nC |
| Minimum operating temperature | - 55 C |
| Maximum operating temperature | + 150 C |
| Pd-power dissipation | 500 mW (1/2 W) |
| Configuration | Single |
| channel mode | Enhancement |
| qualifications | AEC-Q101 |
| Encapsulation | Cut Tape |
| Encapsulation | MouseReel |
| Encapsulation | Reel |
| high | 1.1 mm |
| length | 2.9 mm |
| series | BSS215 |
| Transistor type | 1 P-Channel |
| width | 1.3 mm |
| Forward transconductance - minimum | 4.5 S |
| Fall time | 14 ns |
| Rise Time | 9.7 ns |
| Factory packaging quantity | 3000 |
| Typical shutdown delay time | 14.5 ns |
| Typical switch-on delay time | 6.7 ns |
| unit weight | 8 mg |
| BSS215P H6327 | BSS215PH6327XT | |
|---|---|---|
| Description | MOSFET P-Ch -20V -1.5A SOT-23-3 | MOSFET P-Ch -20V -1.5A SOT-23-3 |
| Product Category | MOSFET | MOSFET |
| Configuration | Single | Single |
| Rise Time | 9.7 ns | 9.7 ns |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD