VP2450N3-G P013 datasheet, PDF

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VP2450N3-G P013: DescriptionMOSFET N-CH Enhancmnt Mode MOSFET; Categorysemiconductor Discrete semiconductor The transistor MOSFET; File Size845KB，6 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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VP2450N3-G P013 Overview

MOSFET N-CH Enhancmnt Mode MOSFET

VP2450N3-G P013 Parametric

Parameter Name	Attribute value
Maker	Microchip
Product Category	MOSFET
technology	Si
Installation style	Through Hole
Package/box	TO-92-3
Number of channels	1 Channel
Transistor polarity	P-Channel
Vds - drain-source breakdown voltage	500 V
Id-continuous drain current	100 mA
Rds On - drain-source on-resistance	35 Ohms
Vgs - gate-source voltage	20 V
Minimum operating temperature	- 55 C
Maximum operating temperature	+ 150 C
Pd-power dissipation	1 W
Configuration	Single
channel mode	Enhancement
Encapsulation	Cut Tape
Encapsulation	Reel
high	5.33 mm
length	5.21 mm
product	MOSFET Small Signal
Transistor type	1 P-Channel
width	4.19 mm
Fall time	25 ns
Rise Time	25 ns
Factory packaging quantity	2000
Typical shutdown delay time	45 ns
Typical switch-on delay time	10 ns
unit weight	453.600 mg

VP2450N3-G P013 Related Products

	VP2450N3-G P013	VP2450N3-G	VP2450N8	VP2450N3-G P003	VP2450N3-G P014	VP2450N3-G P002
Description	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET 500V 30Ohm	MOSFET 500V 30Ohm	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET N-CH Enhancmnt Mode MOSFET
Configuration	Single	SINGLE WITH BUILT-IN DIODE	Single	Single	Single	Single
Maker	Microchip	-	-	Microchip	Microchip	Microchip
Product Category	MOSFET	-	MOSFET	MOSFET	MOSFET	MOSFET
technology	Si	-	-	Si	Si	Si
Installation style	Through Hole	-	-	Through Hole	Through Hole	Through Hole
Package/box	TO-92-3	-	-	TO-92-3	TO-92-3	TO-92-3
Number of channels	1 Channel	-	-	1 Channel	1 Channel	1 Channel
Transistor polarity	P-Channel	-	-	P-Channel	P-Channel	P-Channel
Vds - drain-source breakdown voltage	500 V	-	-	500 V	500 V	500 V
Id-continuous drain current	100 mA	-	-	100 mA	100 mA	100 mA
Rds On - drain-source on-resistance	35 Ohms	-	-	35 Ohms	35 Ohms	35 Ohms
Vgs - gate-source voltage	20 V	-	-	20 V	20 V	20 V
Minimum operating temperature	- 55 C	-	-	- 55 C	- 55 C	- 55 C
Maximum operating temperature	+ 150 C	-	-	+ 150 C	+ 150 C	+ 150 C
Pd-power dissipation	1 W	-	-	1 W	1 W	1 W
channel mode	Enhancement	-	-	Enhancement	Enhancement	Enhancement
Encapsulation	Reel	-	-	Reel	Reel	Reel
high	5.33 mm	-	-	5.33 mm	5.33 mm	5.33 mm
length	5.21 mm	-	-	5.21 mm	5.21 mm	5.21 mm
product	MOSFET Small Signal	-	-	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal
Transistor type	1 P-Channel	-	-	1 P-Channel	1 P-Channel	1 P-Channel
width	4.19 mm	-	-	4.19 mm	4.19 mm	4.19 mm
Fall time	25 ns	-	-	25 ns	25 ns	25 ns
Rise Time	25 ns	-	25 ns	25 ns	25 ns	25 ns
Factory packaging quantity	2000	-	-	2000	2000	2000
Typical shutdown delay time	45 ns	-	-	45 ns	45 ns	45 ns
Typical switch-on delay time	10 ns	-	-	10 ns	10 ns	10 ns
unit weight	453.600 mg	-	-	453.600 mg	453.600 mg	453.600 mg

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