POWER MOSFETS
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | SENSITRON |
package instruction | SMALL OUTLINE, R-CSSO-G2 |
Contacts | 2 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (Abs) (ID) | 45 A |
Maximum drain current (ID) | 45 A |
Maximum drain-source on-resistance | 0.027 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-CSSO-G2 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 150 W |
Maximum power dissipation(Abs) | 150 W |
Maximum pulsed drain current (IDM) | 220 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |