600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Taiwan Semiconductor |
| package instruction | R-PDSO-C2 |
| Reach Compliance Code | _compli |
| ECCN code | EAR99 |
| Other features | UL RECOGNIZED, EXCELLENT CLAMPING CAPABILITY |
| Maximum breakdown voltage | 24.5 V |
| Minimum breakdown voltage | 22.2 V |
| Breakdown voltage nominal value | 23.4 V |
| Maximum clamping voltage | 32.4 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JEDEC-95 code | DO-214AA |
| JESD-30 code | R-PDSO-C2 |
| Humidity sensitivity level | 1 |
| Maximum non-repetitive peak reverse power dissipation | 600 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| polarity | UNIDIRECTIONAL |
| Maximum power dissipation | 3 W |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 20 V |
| surface mount | YES |
| technology | AVALANCHE |
| Terminal surface | Pure Tin (Sn) |
| Terminal form | C BEND |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
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