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IRD3CH5DB6

Description
DIODE GEN PURP 1.2KV 5A DIE
Categorysemiconductor    Discrete semiconductor   
File Size210KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

IRD3CH5DB6 Overview

DIODE GEN PURP 1.2KV 5A DIE

IRD3CH5DB6 Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)1200V
Current - average rectification (Io)5A
Voltage at different If - Forward (Vf2.7V @ 5A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)96ns
Current at different Vr - Reverse leakage current100nA @ 1200V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingMold
Supplier device packagingMold
Operating Temperature - Junction-40°C ~ 150°C

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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