IT120A IT120 IT121 IT122
MONOLITHIC DUAL
NPN
TRANSISTORS
FEATURES
Direct Replacement for Intersil IT120 Series
Pin for Pin Compatible
ABSOLUTE MAXIMUM RATINGS NOTE 1
(T
A
= 25°C unless otherwise noted)
I
C
Collector-Current
10mA
-65°C to +150°C
-55°C to +150°C
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3W/°C
C1
C2
Maximum Temperatures
Storage Temperature Range
Operating Temperature Range
Maximum Power Dissipation
Device Dissipation T
A
=25°C
Linear Derating Factor
B1
E1
E2
B2
TOP VIEW
26 X 29 MILS
ELECTRICAL CHARACTERISTICS T
A
= 25°C (unless otherwise noted)
SYMBOL CHARACTERISTIC
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
V
CE
(SAT)
I
EBO
I
CBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
Collector Saturation Voltage
Emitter Cutoff Current
Collector Cutoff Current
Output Capacitance
3
Collector to Collector Capacitance
3
Collector to Collector Leakage Current
Current Gain Bandwidth Product
3
Narrow Band Noise Figure
3
IT120A IT120 IT121 IT122
45
45
6.2
60
200
225
0.5
1
1
2
2
±500
220
3
45
45
6.2
60
200
225
0.5
1
1
2
2
220
3
45
45
6.2
60
80
100
0.5
1
1
2
2
180
3
45
45
6.2
60
80
100
0.5
1
1
2
2
180
3
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
V
nA
nA
pF
pF
nA
MHz
dB
UNITS CONDITIONS
V
V
V
V
I
C
= 10µA
I
C
= 10µA
I
E
= 10µA
I
C
= 10µA
I
C
= 1.0mA
I
C
= 0.5mA
I
C
= 0
I
E
= 0
I
E
= 0
V
CC
= 0
V
CCO
= ±60V I
B
= I
E
= 0A
V
CE
= 5V
I
C
= 1mA
I
C
= 100µA V
CE
= 5V
BW = 200Hz, R
G
= 10 KΩ
f=1KHz
I
E
= 0A
I
B
= 0A
I
C
= 0A
NOTE 2
V
CE
= 5V
V
CE
= 5V
I
B
= 0.05mA
V
EB
= 3V
V
CB
= 45V
V
CB
= 5V
I
CCO
= 10µA I
B
= I
E
= 0A
±500 ±500 ±500 MAX.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201155 8/30/2012 Rev#A3 ECN# IT120 IT120A IT121 IT122
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
│V
BE1
-V
BE2
│
CHARACTERISTIC
Base Emitter Voltage Differential
Change with Temperature
│I
B1
-I
B2
│
Base Current Differential
3
IT120A IT120 IT121 IT122
1
3
2.5
2
5
5
3
10
25
5
20
25
UNITS CONDITIONS
MAX. mV
MAX. µV/°C
MAX. nA
I
C
= 10 µA
I
C
= 10 µA
I
C
= 10 µA
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
∆│(V
BE1
-V
BE2)
│/∆T
Base Emitter Voltage Differential
T = -55°C to +125°C
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.210
0.170
0.115
0.305
0.335
TO-71
TO-78
0.335
0.370
C1
C2
B2
E2
N/C
0.016
0.019
DIM. A
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
0.200
0.100
2 3
1
5
76
B1
E1
N/C
6 LEADS
0.019 DIA.
0.016
0.100
0.500 MIN. 0.016
0.021
DIM. B
0.029
0.045
0.050
2 3
1
5
6
C1
B1
C2
B2
E2
N/C
45°
0.046
0.036
7
45°
0.028
0.034
0.100
E1
N/C
0.048
0.028
Note: All Dimensions in inches
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. Not a production test.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201155 8/30/2012 Rev#A3 ECN# IT120 IT120A IT121 IT122
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