ES3A - ES3J
Taiwan Semiconductor
3A, 50V - 600V Surface Mount Super Fast Rectifier
FEATURES
●
●
●
●
Glass passivated chip junction
Ideal for automated placement
Super fast recovery time for high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
3
50 - 600
100
150
UNIT
A
V
A
°C
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer, automotive
and telecommunication.
DO-214AB (SMC)
Single die
MECHANICAL DATA
●
●
●
●
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J UNIT
ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J
50
35
50
100
70
100
150
105
150
200
140
200
3
100
- 55 to +150
- 55 to +150
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
A
°C
°C
1
Version:L1708
ES3A - ES3J
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
SYMBOL
R
ӨJL
R
ӨJA
LIMIT
12
47
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
ES3A
ES3B
ES3C
ES3D
ES3F
ES3G
ES3H
ES3J
(2)
CONDITIONS
SYMBOL
TYP.
-
MAX.
0.95
UNIT
V
Forward voltage per diode
(1)
I
F
= 3A, T
J
= 25°C
V
F
-
-
1.30
1.70
10
500
-
V
V
µA
µA
pF
Reverse current @ rated V
R
per diode
T
J
= 25°C
T
J
= 100°C
I
R
-
-
45
Junction capacitance
ES3A
ES3B
ES3C
ES3D
ES3F
ES3G
ES3H
ES3J
1 MHz, V
R
=4.0V
C
J
30
-
pF
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
t
rr
-
35
ns
2
Version:L1708
ES3A - ES3J
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
3.5
AVERAGE FORWARD CURRENT (A)
JUNCTION CAPACITANCE (pF)
105
90
75
60
45
30
15
0
ES3F - ES3J
f=1.0MHz
Vsig=50mVp-p
1
10
REVERSE VOLTAGE (V)
100
ES3A - ES3D
Fig.2 Typical Junction Capacitance
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
LEAD TEMPERATURE (
°
C)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
1000
10 10
Fig.4 Typical Forward Characteristics
100
T
J
=125°C
10
T
J
=75°C
1
T
J
=25°C
0.1
0
20
40
60
80
100
120
140
1
UF1DLW
ES3F - ES3G
T
J
=125°C
ES3A - ES3D
0.1
1
0.01
T
J
=25°C
(A)
ES3H - ES3J
Pulse width
0.001
0.1
0.3
0.4
0.4
0.6
0.5
0.8
0.6
1
0.7
1.2
0.8
0.9
1.4
1
1.6
1.1
1.8
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:L1708
ES3A - ES3J
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
TRANSIENT THERMAL IMPEDANCE A (°C/W)
PEAK FORWARD SURGE CURRENT (A)
Fig.6 Typical Transient Thermal Characteristics
100
100
90
80
70
60
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine Wave
10
1
0.1
0.01
0.1
1
HEATING TIME (s)
10
100
100
Fig.7 Reverse Recovery Time Characteristic And Test Circuit Diagram
5
Version:L1708
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