U3D-M3/9AT datasheet, PDF - EEWORLD Datasheet

U3D-M3/9AT: DescriptionDIODE GEN PURP 200V 2A DO214AB; CategoryDiscrete semiconductor diode; File Size85KB，4 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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U3D-M3/9AT Overview

DIODE GEN PURP 200V 2A DO214AB

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
package instruction	SMC, 2 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	12 weeks
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	ULTRA FAST RECOVERY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.03 µs
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	30

U3D-M3/9AT Related Products

	U3D-M3/9AT	U3B-M3/9AT	U3C-M3/9AT	U3B-M3/57T	U3C-M3/57T	U3D-M3/57T
Description	DIODE GEN PURP 200V 2A DO214AB	DIODE GEN PURP 100V 2A DO214AB	DIODE GEN PURP 150V 2A DO214AB	DIODE GEN PURP 100V 2A DO214AB	DIODE GEN PURP 150V 2A DO214AB	DIODE GEN PURP 200V 2A DO214AB
Diode type	RECTIFIER DIODE	standard	standard	standard	standard	RECTIFIER DIODE
Voltage - DC Reverse (Vr) (Maximum)	-	100V	150V	100V	150V	-
Current - average rectification (Io)	-	2A	2A	2A	2A	-
Voltage at different If - Forward (Vf	-	900mV @ 3A	900mV @ 3A	900mV @ 3A	900mV @ 3A	-
speed	-	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)	-
Reverse recovery time (trr)	-	30ns	30ns	30ns	150ns	-
Current at different Vr - Reverse leakage current	-	10µA @ 100V	10µA @ 150V	10µA @ 100V	10µA @ 150V	-
Capacitance at different Vr, F	-	25pF @ 4V，1MHz	25pF @ 4V，1MHz	25pF @ 4V，1MHz	25pF @ 4V，1MHz	-
Installation type	-	surface mount	surface mount	surface mount	surface mount	-
Package/casing	-	DO-214AB，SMC	DO-214AB，SMC	DO-214AB，SMC	DO-214AB，SMC	-
Supplier device packaging	-	DO-214AB（SMC）	DO-214AB（SMC）	DO-214AB（SMC）	DO-214AB（SMC）	-
Operating Temperature - Junction	-	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-

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