This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA1096, 2SC1096A
φ
3.16
±0.1
8.0
+0.5
–0.1
Unit: mm
3.2
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
3.8
±0.3
11.0
±0.5
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SC2497
(Base open)
2SC2497A
Emitter-base voltage (Collector open)
Collector current
V
EBO
I
C
I
CP
P
C
T
j
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
Collector-base voltage (Emitter open)
Collector-emitter voltage
(Base open)
isc
2SC2497A
on
2SC2497
ce
/D
Collector-base cutoff current (Emitter open)
an
Collector-emitter cutoff current (Base open)
Ma
int
en
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
80 to 160
R
120 to 220
d
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Rating
70
50
Unit
V
V
0.75
±0.1
0.5
±0.1
1.9
±0.1
16.0
±1.0
4.6
±0.2
0.5
±0.1
1.76
±0.1
60
5
2.3
±0.2
V
1
2
3
1.5
3
A
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
A
1.2
W
150
°C
−55
to
+150
°C
Conditions
Min
70
Typ
Max
ue
tin
I
C
=
1 mA, I
E
=
0
3.05
±0.1
Unit
V
I
C
=
2 mA, I
B
=
0
50
V
60
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
1
µA
µA
V
V
100
10
µA
V
CE
=
5 V, I
C
=
1 A
80
220
1
I
C
=
1.5 A, I
B
=
0.15 A
I
C
=
1.5 A, I
B
=
0.15 A
1.5
V
CB
=
5 V, I
E
= −
0.5 A, f
=
200 MHz
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
150
35
MHz
pF
Publication date: January 2003
SJD00099BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2497, 2SC2497A
P
C
T
a
6
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
4.0
T
C
=25˚C
V
CE(sat)
I
C
I
C
/I
B
=10
Collector power dissipation P
C
(W)
5
(1)
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
3.5
10
Collector current I
C
(A)
3.0
2.5
2.0
1.5
1.0
0.5
0
I
B
=50mA
45mA
40mA
35mA
30mA
25mA
20mA
4
1
3
M
ain
Di
sc te
on na
tin nc
ue e/
d
2
15mA
T
C
=100˚C
25˚C
–25˚C
0.1
1
(2)
10mA
5mA
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
V
BE(sat)
I
C
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
10
1 000
1
T
C
=–25˚C
100˚C
25˚C
0.1
ue
0.01
0.01
0.1
1
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
ce
240
/D
C
ob
V
CB
isc
on
tin
Collector current I
C
(A)
200
Collector-emitter voltage
(V)
V
(Resistor between B and E)
CER
Ma
int
en
I
E
=0
f=1MHz
T
C
=25˚C
60
120
I
CBO
(T
a
)
I
CBO
(T
a
=
25°C)
160
80
40
0
1
10
100
Collector-base voltage V
CB
(V)
2
d
pla inc
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.
0
2
4
6
8
10
12
0.01
0.01
0.1
1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
h
FE
I
C
f
T
I
E
240
V
CE
=5V
Forward current transfer ratio h
FE
T
C
=100˚C
Transition frequency f
T
(MHz)
200
V
CB
=5V
f=200MHz
T
C
=25˚C
160
100
–25˚C
25˚C
120
10
80
40
1
0.01
0.1
1
0
−0.01
−0.1
−1
−10
Collector current I
C
(A)
Emitter current I
E
(A)
V
CER
R
BE
I
CBO
T
a
100
an
I
C
=10mA
T
C
=25˚C
10
4
V
CB
=40V
80
10
3
10
2
40
10
20
0
0.1
1
10
100
1
0
40
80
120
160
Base-emitter resistance R
BE
(kΩ)
Ambient temperature T
a
(°C)
SJD00099BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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int
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ain
Di
sc te
on na
tin nc
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isc
on
tin
ue
di
Power technology
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