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1N4007

Description
DIODE GEN PURP 1KV 1A DO41
Categorysemiconductor    Discrete semiconductor   
File Size284KB,4 Pages
ManufacturerMicro Commercial Co
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DIODE GEN PURP 1KV 1A DO41

1N4007 Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)1000V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.1V @ 1A
speedStandard recovery >500ns, >200mA (Io)
Reverse recovery time (trr)2µs
Current at different Vr - Reverse leakage current5µA @ 1000V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingDO-204AL, DO-41, axial
Supplier device packagingDO-41
Operating Temperature - Junction-55°C ~ 150°C
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