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MA2C85600E

Description
DIODE GEN PURP 35V 100MA DO34
Categorysemiconductor    Discrete semiconductor   
File Size230KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA2C85600E Overview

DIODE GEN PURP 35V 100MA DO34

MA2C85600E Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)35V
Current - average rectification (Io)100mA(DC)
Voltage at different If - Forward (Vf1V @ 100mA
speedSmall signal =< 200mA (Io), any speed
Current at different Vr - Reverse leakage current100nA @ 33V
Capacitance at different Vr, F2pF @ 15V,1MHz
Installation typeThrough hole
Package/casingDO-204AG, DO-34, axial
Supplier device packagingDO34-A1
Operating Temperature - Junction-25°C ~ 85°C
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