UF1D B0G datasheet, PDF - EEWORLD Datasheet

UF1D B0G: DescriptionDIODE GEN PURP 200V 1A DO204AL; Categorysemiconductor Discrete semiconductor; File Size376KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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UF1D B0G Overview

DIODE GEN PURP 200V 1A DO204AL

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	200V
Current - average rectification (Io)	1A
Voltage at different If - Forward (Vf	1V @ 1A
speed	Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)	50ns
Current at different Vr - Reverse leakage current	5µA @ 200V
Capacitance at different Vr, F	17pF @ 4V，1MHz
Installation type	Through hole
Package/casing	DO-204AL, DO-41, axial
Supplier device packaging	DO-204AL（DO-41）
Operating Temperature - Junction	-55°C ~ 150°C

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