DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BZX99 series
Voltage regulator diodes
Product specification
Supersedes data of 1999 May 31
1999 Oct 20
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 300 mW
•
Tolerance:
±5%
•
Working voltage range: nom. 2.4 to 15 V (E24 range)
•
Improved I
z
/V
z
characteristics at low currents
(I
z
= 50
µA).
This results in a noise free and sharp
breakdown knee.
APPLICATIONS
•
General regulation functions, where low noise at low
currents is required
•
Low-power consumption applications (e.g. hand-held
applications).
DESCRIPTION
Low-power low noise voltage regulator diodes in small
SOT23 plastic SMD packages.
The diodes are available in the normalized E24
±5%
tolerance range. The series consists of 20 types with
nominal working voltages from 2.4 to 15 V.
Top view
handbook, halfpage
2
BZX99 series
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
1
2
n.c.
3
3
1
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
TYPE
NUMBER
BZX99-C2V4
BZX99-C2V7
BZX99-C3V0
BZX99-C3V3
BZX99-C3V6
MARKING
CODE
XL
XM
XN
XP
XR
TYPE
NUMBER
BZX99-C3V9
BZX99-C4V3
BZX99-C4V7
BZX99-C5V1
BZX99-C5V6
MARKING
CODE
XS
XT
XA
XB
XC
TYPE
NUMBER
BZX99-C6V2
BZX99-C6V8
BZX99-C7V5
BZX99-C8V2
BZX99-C9V1
MARKING
CODE
XD
XE
XU
XV
XW
TYPE
NUMBER
BZX99-C10
BZX99-C11
BZX99-C12
BZX99-C13
BZX99-C15
MARKING
CODE
XX
XY
XZ
X2
X3
1999 Oct 20
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Total BZX99-C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZX99-C2V4
BZX99-C2V7
BZX99-C3V0
BZX99-C3V3
BZX99-C3V6
BZX99-C3V9
BZX99-C4V3
BZX99-C4V7
BZX99-C5V1
BZX99-C5V6
BZX99-C6V2
BZX99-C6V8
BZX99-C7V5
BZX99-C8V2
BZX99-C9V1
BZX99-C10
BZX99-C11
BZX99-C12
BZX99-C13
BZX99-C15
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 3 V
V
R
= 3 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 7 V
V
R
= 8 V
V
R
= 9 V
V
R
= 10 V
V
R
= 10.5 V
0.2
0.05
0.02
2
1
0.5
0.1
2
1
1
0.1
0.01
0.1
0.2
0.1
0.1
0.05
0.05
0.05
0.01
CONDITIONS
I
F
= 10 mA; see Fig.4
I
F
= 100 mA; see Fig.4
0.9
1
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave;
T
amb
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
CONDITIONS
−
MIN.
BZX99 series
MAX.
300
UNIT
mA
see Table 1
−
−65
−
300
+150
150
mW
°C
°C
MAX.
V
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
UNIT
1999 Oct 20
3
Philips Semiconductors
Product specification
Voltage regulator diodes
Table 1
Per type BZX99-C2V4 to C15
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Z
= 50
µA
Tol.
±5%
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
Note
1.
∆V
Z
= V
Z
at 100
µA
minus V
Z
at 10
µA
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Notes
1. Device mounted on an FR4 printed-circuit board.
2. Solderpoint of cathode tab.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solderpoint
CONDITIONS
note 1
note 2
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
MAX.
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
MAX.
0.80
0.85
0.90
0.93
0.95
0.97
0.99
0.97
0.60
0.20
0.10
0.10
0.15
0.15
0.10
0.10
0.11
0.12
0.13
0.15
−1.15
−1.35
−1.50
−1.65
−1.80
−1.95
−2.05
−1.90
−0.15
1.75
2.35
3.00
3.60
4.25
5.00
5.80
6.70
7.65
8.60
10.50
VOLTAGE
CHANGE
∆V
Z
(V)
(1)
TEMP. COEFF.
S
Z
(mV/K)
I
Ztest
= 50
µA
(see Figs 2 and 3)
TYP.
370
350
325
310
300
290
280
275
300
275
250
215
170
150
120
110
110
105
105
100
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
5.0
4.0
3.0
3.0
3.0
3.0
3.0
3.0
2.5
2.5
2.5
2.0
BZX99 series
BZX99-C
XXX
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
VALUE
415
195
UNIT
K/W
K/W
1999 Oct 20
4
Philips Semiconductors
Product specification
Voltage regulator diodes
GRAPHICAL DATA
BZX99 series
MGL741
handbook, full pagewidth
0
Sz
(mV/K)
−0.5
−1
C2V4
C3V0
C3V3
C3V6
C3V9
−1.5
−2
C4V3
C4V7
−2.5
10
T
j
= 25 to 150
°C.
10
2
Iz (µA)
10
3
Fig.2 Temperature coefficient as a function of working current; typical values.
handbook, halfpage
12
MGL742
MBG781
handbook, halfpage
300
Sz
(mV/K)
8
C15
IF
(mA)
C12
C10
200
4
C8V2
C6V8
C6V2
C5V6
100
0
C5V1
−4
10
10
2
Iz (µA)
10
3
0
0.6
0.8
VF (V)
1.0
T
j
= 25 to 150
°C.
T
j
= 25
°C.
Fig.3
Temperature coefficient as a function of
working current; typical values.
Fig.4
Forward current as a function of forward
voltage; typical values.
1999 Oct 20
5
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