IPB80N06S4L-07
IPI80N06S4L-07, IPP80N06S4L-07
OptiMOS
®
-T2
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
60
6.4
80
V
mΩ
A
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
IPB80N06S4L-07
IPI80N06S4L-07
IPP80N06S4L-07
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N06L07
4N06L07
4N06L07
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25°C
I
D
=40A
-
-
T
C
=25°C
-
-
Value
80
58
320
71
80
±16
79
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2009-03-24
IPB80N06S4L-07
IPI80N06S4L-07, IPP80N06S4L-07
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
-
-
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=40µA
V
DS
=60V,
V
GS
=0V
V
DS
=60V,
V
GS
=0V,
T
j
=125°C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=16V,
V
DS
=0V
V
GS
=4.5V,
I
D
=40A
V
GS
=4.5V,
I
D
=40A,
SMD version
V
GS
=10 V,
I
D
=80 A
V
GS
=10 V,
I
D
=80 A,
SMD version
60
1.2
-
-
-
-
-
-
-
-
1.7
0.01
5
-
7.9
7.6
5.5
5.2
-
2.2
1
100
100
11.3
11
6.7
6.4
nA
mΩ
µA
V
-
-
-
-
-
-
-
-
1.9
62
62
40
K/W
Values
typ.
max.
Unit
Rev. 1.0
page 2
2009-03-24
IPB80N06S4L-07
IPI80N06S4L-07, IPP80N06S4L-07
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25°C
V
GS
=0V,
I
F
=80A,
T
j
=25°C
V
R
=30V,
I
F
=80A,
di
F
/dt =100A/µs
-
-
0.6
-
-
0.95
80
320
1.3
V
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=48V,
I
D
=80A,
V
GS
=0 to 10V
-
-
-
-
17
6
58
4.0
22
12
75
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30V,
V
GS
=10V,
I
D
=80A,
R
G
=3.5Ω
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
4370
980
45
10
3
50
8
5680
1270
90
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
2)
t
rr
-
39
-
ns
Reverse recovery charge
2)
1)
Q
rr
-
38
-
nC
Current is limited by bondwire; with an
R
thJC
= 1.9K/W the chip is able to carry 82A at 25°C.
Specified by design. Not subject to production test.
2)
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2009-03-24
IPB80N06S4L-07
IPI80N06S4L-07, IPP80N06S4L-07
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
6 V; SMD
90
80
70
60
100
80
60
P
tot
[W]
40
30
20
10
0
0
50
100
150
200
I
D
[A]
40
20
0
0
50
100
150
200
50
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0; SMD
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10
0
100
10 µs
0.5
0.1
Z
thJC
[K/W]
I
D
[A]
100 µs
10
-1
0.05
0.01
10
10
-2
1 ms
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2009-03-24
IPB80N06S4L-07
IPI80N06S4L-07, IPP80N06S4L-07
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C; SMD
parameter:
V
GS
320
10 V
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C; SMD
parameter:
V
GS
280
240
200
6V
14
4V
4.5 V
5V
12
I
D
[A]
5V
R
DS(on)
[mΩ]
10
160
4.5 V
120
80
40
0
0
1
2
3
4
5
6
4V
8
6V
6
10 V
4
0
80
160
240
320
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
320
-55 °C
25 °C
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 80 A;
V
GS
= 10 V; SMD
10
280
240
9
8
R
DS(on)
[m
Ω
]
6
200
175 °C
I
D
[A]
7
160
120
80
40
0
0
1
2
3
4
5
6
5
4
3
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2009-03-24
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