2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
SST12L012.4-2.5 GHz Low-Noise Amplifier
Preliminary Specifications
FEATURES:
•
•
•
•
•
•
•
Suitable Gain:
– Typically 12-13 dB gain across 2.4–2.5 GHz
Low Noise Figure:
– 1.2-1.5 dB across 2.4–2.5 GHz
IIP3:
– 3 dBm across 2.4–2.5 GHz
Low Current Consumption
– 12 mA across 2.4–2.5 GHz
50Ω Input/Output Matched
Packages available
– 16-contact UQFN – 3 mm x 1.6 mm
All non-Pb (lead-free) devices are RoHS compliant
APPLICATIONS:
• WLAN
• Bluetooth
• Wireless Network
PRODUCT DESCRIPTION
The SST12LN01 is a cost effective Low Noise Amplifier
(LNA) which does not require external RF-matching com-
ponents on PCB applications. This device is based on the
0.5
µ
m GaAs PHEMT technology, and complies with
802.11 b/g applications.
SST12LN01 provides high-performance, low-noise, and
mild-gain operations within the 2.4–2.5 GHz frequency
band. Across this frequency band, this device typically pro-
vides 12-13 dB gain.
This LNA cell is equipped with a self DC-biasing scheme,
which helps keep the DC consumption very low during
operation. A pair of singled-ended, input and output ports is
assigned to the LNA cell with a 50 RF match.
The SST12LN01 is offered in a 6-contact UQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
©2006 Silicon Storage Technology, Inc.
S71329-00-000
9/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
FUNCTIONAL BLOCKS
1
2
3
LNA
6
5
4
1329 F1.0
FIGURE 1: Functional Block Diagram
©2006 Silicon Storage Technology, Inc.
S71329-00-000
9/06
2
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
PIN ASSIGNMENTS
Top View
(contacts facing down)
V
DD
NC
RF
IN
1
2
3
NC
1329 6-uqfn P1.0
6
RF and DC GND
0
5
4
RF
OUT
NC
FIGURE 2: Pin Assignments for 16-contact UQFN
PIN DESCRIPTIONS
TABLE 1: Pin Description
Symbol
GND
NC
RFIN
NC
NC
RFOUT
VDD
Pin No.
0
1
2
3
4
5
6
Power Supply
No Connection
No Connection
O
PWR
T1.0 1329
Pin Name
Ground
No Connection
Type
1
Function
Unconnected pin
I
2.4G RF input
Unconnected pin
Unconnected pin
2.4G RF output
1. I=Input, O=Output
©2006 Silicon Storage Technology, Inc.
S71329-00-000
9/06
3
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-
ifications. Refer to Figure 3 for the RF performance.
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Input power to pin 2 (P
IN
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-15 dBm
Supply Voltage at pin 6 (V
DD
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.5V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating
of average output power could cause permanent damage to the device.
Operating Range
Range
Extended
Ambient Temp
-20 to +80ºC
V
CC
2.9–3.5V
TABLE 2: DC Electrical Characteristics
Symbol
V
CC
I
CC
Parameter
Supply Voltage at pin 6
Supply Current 2.4
–
2.5 GHz
Min.
Typ
3.0
12
Max.
Unit
V
mA
T2.0 1329
TABLE 3: AC Electrical Characteristics for Configuration
Symbol
F
L-U
G
NF
IIP3
Parameter
Frequency range
Small signal gain, 2.4
–
2.55 GHz
Noise Figure, 2.4
–
2.55 GHz
2.4
–
2.55 GHz
Min.
2400
12
1.14
3
Typ
Max.
2550
13
1.5
Unit
MHz
dB
dB
dBm
T3.2 1329
©2006 Silicon Storage Technology, Inc.
S71329-00-000
9/06
4
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
TYPICAL PERFORMANCE CHARACTERISTICS
Test Conditions: V
DDL
= 3.0V, T
A
= 25°C, unless otherwise specified
S11 versus Frequency
20
20
10
10
0
0
-10
S12 versus Frequency
S11 (dB)
-10
S12 (dB)
0
1
2
3
4
5
6
7
8
9
10
-20
-30
-40
-20
-30
-50
-40
-60
0
1
2
3
4
5
6
7
8
9
10
Frequency (G Hz)
Frequency (G Hz)
S21 versus Frequency
20
20
S22 versus Frequency
10
10
0
0
S21 (dB)
-10
S22 (dB)
0
1
2
3
4
5
6
7
8
9
10
-10
-20
-20
-30
-30
-40
-40
0
1
2
3
4
5
6
7
8
9
10
Frequency (G Hz)
Frequency (G Hz)
1329-sparm1.1
FIGURE 3: S-Parameters
©2006 Silicon Storage Technology, Inc.
S71329-00-000
9/06
5
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