DD261N20K-K datasheet, PDF - EEWORLD Datasheet

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DD261N20K-K: DescriptionRectifier Diode, 1 Phase, 2 Element, 260A, 2000V V(RRM), Silicon, MODULE-3; Categorydiode Rectifier diode; File Size268KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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DD261N20K-K Overview

Rectifier Diode, 1 Phase, 2 Element, 260A, 2000V V(RRM), Silicon, MODULE-3

DD261N20K-K Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	MODULE-3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	UL RECOGNIZED
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.42 V
JESD-30 code	R-XUFM-X3
Maximum non-repetitive peak forward current	8300 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	260 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	2000 V
Maximum reverse current	40000 µA
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Base Number Matches	1

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Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V
Maximum non-repetitive peak forward current	8300 A	8300 A	8300 A	8300 A	8300 A	8300 A	8300 A	9500 A	9500 A	9500 A
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	260 A	260 A	260 A	260 A	260 A	260 A	260 A	260 A	260 A	260 A
Maximum repetitive peak reverse voltage	2000 V	2000 V	2200 V	2400 V	2400 V	2600 V	2200 V	2000 V	2600 V	2200 V
Base Number Matches	1	1	1	1	1	1	1	1	1	1
Maker	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	-	-	-
package instruction	MODULE-3	R-XUFM-X3	MODULE-3	MODULE-3	MODULE-3	MODULE-3	MODULE-3	-	-	-
Is Samacsys	N	-	N	N	N	N	N	-	-	-
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	-	-	-
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	-	-	-
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-	-	-
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	-	-	-
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-	-	-
JESD-30 code	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	-	-	-
Number of components	2	2	2	2	2	2	2	-	-	-
Phase	1	1	1	1	1	1	1	-	-	-
Number of terminals	3	3	3	3	3	3	3	-	-	-
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-	-	-
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	-	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	-
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	-	-
Maximum reverse current	40000 µA	40000 µA	40000 µA	40000 µA	40000 µA	40000 µA	40000 µA	-	-	-
surface mount	NO	NO	NO	NO	NO	NO	NO	-	-	-
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	-	-
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	-	-	-

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