The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
MOSFET N-CHANNEL 600V 18A TO220
FET type
N channel
-
N channel
technology
MOSFET (metal oxide)
-
MOSFET (metal oxide)
Drain-source voltage (Vdss)
650V
-
600V
Current - Continuous Drain (Id) at 25°C
18A（Tc）
-
18A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)
10V
-
10V
Rds On (maximum value) when different Id, Vgs
180 milliohms @ 5.6A, 10V
-
180 milliohms @ 5.6A, 10V
Vgs (th) (maximum value) when different Id
4V @ 280µA
-
4V @ 280µA
Gate charge (Qg) at different Vgs (maximum value)
25nC @ 10V
-
25nC @ 10V
Vgs (maximum value)
±20V
-
±20V
Input capacitance (Ciss) at different Vds (maximum value)
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