IKB40N65ES5
Highspeedswitchingseries5
th
generation
TRENCHSTOP
TM
5highspeedsoftswitchingIGBTcopackedwithfullrated
currentRAPID1fastandsoftantiparalleldiode
FeaturesandBenefits:
HighspeedS5technologyoffering
•Highspeedsmoothswitchingdeviceforhard&softswitching
•VeryLowV
CEsat
,1.35Vatnominalcurrent
•650Vbreakdownvoltage
•LowQ
G
•IGBTcopackedwithfullratedcurrentRAPID1fastantiparallel
diode
•Maximumjunctiontemperature175°C
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
PotentialApplications:
•EnergyGeneration
-SolarStringInverter
-SolarMicroInverter
•IndustrialPowerSupplies
-IndustrialSMPS
-IndustrialUPS
•MetalTreatment
-Welding
•EnergyDistribution
-EnergyStorage
•Infrastructure–Charge
-Charger
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
C
G
E
C
G
E
KeyPerformanceandPackageParameters
Type
IKB40N65ES5
V
CE
650V
I
C
40A
V
CEsat
,T
vj
=25°C
1.35V
T
vjmax
175°C
Marking
K40EES5
Package
PG-TO263-3
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V2.1
2018-04-04
IKB40N65ES5
Highspeedswitchingseries5
th
generation
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
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IKB40N65ES5
Highspeedswitchingseries5
th
generation
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,T
vj
≥25°C
DCcollectorcurrent,limitedbyT
vjmax
T
c
=25°C
T
c
=100°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
Turn off safe operating area
V
CE
≤650V,T
vj
≤175°C,t
p
=1µs
Diodeforwardcurrent,limitedbyT
vjmax1)
T
c
=25°C
T
c
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Gate-emitter voltage
TransientGate-emittervoltage(t
p
≤10µs,D<0.010)
PowerdissipationT
c
=25°C
PowerdissipationT
c
=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
ThermalResistance
Parameter
R
th
Characteristics
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
R
th(j-c)
R
th(j-c)
R
th(j-a)
R
th(j-a)
Symbol Conditions
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
P
tot
T
vj
T
stg
Value
650
79.0
50.0
160.0
160.0
40.0
40.0
160.0
±20
±30
230.0
115.0
-40...+175
-55...+150
260
Unit
V
A
A
A
A
A
V
W
°C
°C
°C
Value
min.
typ.
max.
Unit
-
-
-
-
-
-
-
-
0.65
0.75
65
40
K/W
K/W
K/W
K/W
1)
value limited by bondwire
Datasheet
3
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IKB40N65ES5
Highspeedswitchingseries5
th
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ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.20mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=40.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
V
GE
=0V,I
F
=40.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
I
C
=0.40mA,V
CE
=V
GE
V
CE
=650V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=40.0A
650
-
-
-
-
-
-
3.2
-
-
-
-
-
1.35
1.50
1.60
1.45
1.42
1.39
4.0
-
2000
-
45.0
-
1.70
-
-
1.70
-
-
4.8
50
-
100
-
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
F
V
GE(th)
I
CES
I
GES
g
fs
V
V
µA
nA
S
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
C
ies
C
oes
C
res
Q
G
L
E
V
CC
=520V,I
C
=40.0A,
V
GE
=15V
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
2500
71
9
95.0
7.0
-
-
-
-
-
nC
nH
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=25°C,
V
CC
=400V,I
C
=40.0A,
V
GE
=0.0/15.0V,
R
G(on)
=10.0Ω,R
G(off)
=10.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
19
18
130
23
0.86
0.40
1.26
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
Symbol Conditions
Value
min.
typ.
max.
Unit
Datasheet
4
V2.1
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IKB40N65ES5
Highspeedswitchingseries5
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Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
DiodeCharacteristic,atT
vj
=25°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=25°C,
V
R
=400V,
I
F
=40.0A,
di
F
/dt=820A/µs
-
-
-
-
T
vj
=25°C,
V
R
=400V,
I
F
=20.0A,
di
F
/dt=750A/µs
-
-
-
-
73
1.10
23.0
-1500
58
0.80
22.0
-1740
-
-
-
-
-
-
-
-
ns
µC
A
A/µs
ns
µC
A
A/µs
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=25°C,
V
CC
=400V,I
C
=20.0A,
V
GE
=0.0/15.0V,
R
G(on)
=10.0Ω,R
G(off)
=10.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
18
7
143
24
0.39
0.21
0.60
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
Diode peak reverse recovery current
I
rrm
di
rr
/dt
t
rr
Q
rr
Diode peak reverse recovery current
I
rrm
di
rr
/dt
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=150°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=150°C,
V
CC
=400V,I
C
=20.0A,
V
GE
=0.0/15.0V,
R
G(on)
=10.0Ω,R
G(off)
=10.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
T
vj
=150°C,
V
CC
=400V,I
C
=40.0A,
V
GE
=0.0/15.0V,
R
G(on)
=10.0Ω,R
G(off)
=10.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
16
156
48
1.20
0.69
1.89
18
8
184
48
0.60
0.39
0.99
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
Symbol Conditions
Value
min.
typ.
max.
Unit
Datasheet
5
V2.1
2018-04-04
Switching Power Supply Study Group
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