Bulletin I25233 10/06
ST173CPbF SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
330A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST173C..C
330
55
610
25
4680
4900
110
100
1000 to1200
15 to 30
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°C
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ST173CPbF Series
Bulletin I25233 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
ST173C..C
10
12
1000
1200
V
RSM
, maximum
non-repetitive peak voltage
V
1100
1300
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
40
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
760
730
600
350
50
V
DRM
50
40
I
TM
180
o
el
660
590
490
270
50
50
55
1200
1260
1200
850
50
V
DRM
-
40
I
TM
100μs
1030
1080
1030
720
50
-
55
5570
2800
1620
800
50
V
DRM
-
40
I
TM
Units
4920
2460
1390
680
50
-
55
V
A/μs
°C
A
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
cooled
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
4680
4900
3940
4120
I
2
t
Maximum I
2
t for fusing
110
100
77
71
I
2
√t
Maximum I
2
√t
for fusing
1100
KA
2
√s
KA s
2
ST173C..C
330 (120)
55 (85)
610
Units Conditions
A
°C
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
t = 0.1 to 10ms, no voltage reapplied
2
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ST173CPbF Series
Bulletin I25233 10/06
On-state Conduction
Parameter
V
TM
V
T(TO)1
Max. peak on-state voltage
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
ST173C..C
2.07
1.55
1.61
0.87
Units
Conditions
I
TM
= 600A, T
J
= T
J
max, t = 10ms sine wave pulse
p
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
Low level value of forward
slope resistance
m
Ω
0.77
600
1000
mA
r
t
2
I
H
I
L
High level value of forward
slope resistance
Maximum holding current
Typical latching current
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST173C..C
1000
1.1
Min
15
Max
30
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t = 1µs
p
Typical delay time
µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 300A, commutating di/dt = 20A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST173C..C
500
40
Units
V/μs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST173C..C
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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ST173CPbF Series
Bulletin I25233 10/06
Thermal and Mechanical Specification
Parameter
T
J
T
stg
ST173C..C
-40 to 125
-40 to 150
0.17
0.08
0.033
0.017
4900
(500)
Units Conditions
°C
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
N
(Kg)
g
See Outline Table
Max. operating temperature range
Max. storage temperature range
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
K/W
wt
Approximate weight
Case style
50
TO - 200AB (A-PUK)
ΔR
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
0.015
0.018
0.024
0.035
0.060
0.016
0.019
0.024
0.035
0.060
Rectangular conduction
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
Units
Conditions
Single Side Double Side Single Side Double Side
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
17
2
3
3
C
4
12
5
C
6
H
7
K
8
1
9
10
P
11
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- C = Puk Case TO-200AB (A-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
11
- P = Lead Free
dv/dt - t
q
combinations available
dv/dt (V/µs)
15
18
t (µs)
20
q
25
30
20
CL
CP
CK
CJ
--
50
--
DP
DK
DJ
DH
100
--
EP
EK
EJ
EH
200
--
FP *
FK *
FJ
FH
400
--
--
HK
HJ
HH
*
Standard part number.
All other types available only on request.
4
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ST173CPbF Series
Bulletin I25233 10/06
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
0
40
80
120
160
200
240
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Conduction Angle
Maximum Allowable Heatsink T
emperature (°C)
S 173C..C S
T
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.17 K/ W
130
120
110
100
90
80
70
60
50
40
30
20
0
50
100
30°
S 173C..C S
T
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.17 K/ W
Conduction Period
60°
90°
120°
180°
150
200
250
DC
300
350
30°
60°
90°
120°
180°
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
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