UNR421900A datasheet, PDF - EEWORLD Datasheet

UNR421900A: DescriptionTRANS PREBIAS NPN 300MW NS-B1; Categorysemiconductor Discrete semiconductor; File Size487KB，14 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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UNR421900A Overview

TRANS PREBIAS NPN 300MW NS-B1

Parameter Name	Attribute value
Transistor type	NPN - Pre-biased
Current - Collector (Ic) (Maximum)	100mA
Voltage - collector-emitter breakdown (maximum)	50V
Resistor - Substrate (R1)	1 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)	30 @ 5mA，10V
Vce saturation value (maximum value) when different Ib,Ic	250mV @ 300µA，10mA
Current - collector cutoff (maximum)	500nA
Frequency - Transition	150MHz
Power - Max	300mW
Installation type	Through hole
Package/casing	NS-B1
Supplier device packaging	NS-B1

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