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FZ1600R17KE3NOSA1

Description
IGBT MODULE 1700V 1600A
CategoryDiscrete semiconductor    The transistor   
File Size376KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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FZ1600R17KE3NOSA1 Overview

IGBT MODULE 1700V 1600A

FZ1600R17KE3NOSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time36 weeks
Shell connectionISOLATED
Maximum collector current (IC)2300 A
Collector-emitter maximum voltage1700 V
ConfigurationPARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)1770 ns
Nominal on time (ton)750 ns

FZ1600R17KE3NOSA1 Related Products

FZ1600R17KE3NOSA1 FZ1600R17KE3
Description IGBT MODULE 1700V 1600A Thermal Interface Products Soft PGS - IGBT Mod Infineon
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Infineon Infineon
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7
Contacts 7 7
Reach Compliance Code not_compliant unknown
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 2300 A 2300 A
Collector-emitter maximum voltage 1700 V 1700 V
Configuration PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code R-XUFM-X7 R-XUFM-X7
Number of components 2 2
Number of terminals 7 7
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 1770 ns 1770 ns
Nominal on time (ton) 750 ns 750 ns

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