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3N258-E4/72

Description
BRIDGE RECT 1PHASE 800V 2A KBPM
CategoryDiscrete semiconductor    diode   
File Size87KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

3N258-E4/72 Overview

BRIDGE RECT 1PHASE 800V 2A KBPM

3N258-E4/72 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
package instructionR-PSIP-W4
Contacts4
Manufacturer packaging codeCASE KBPM
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSIP-W4
JESD-609 codee4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature165 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal surfaceSILVER
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
Base Number Matches1
2KBPxxM-E4, 3N25x-E4
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
~
~
+
Case Style KBPM
• Solder dip 275 °C max. 10 s, per JESD 22-B106
+
~
~
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
KBPM
2.0 A
50 V to 1000 V
60 A
5 μA
1.1 V
165 °C
In-line
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 3.14 A
T
J
max.
Diode variations
MECHANICAL DATA
Case:
KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals:
Silver plated
J-STD-002 and JESD22-B102
Polarity:
As marked on body
leads,
solderable
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse
voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output
rectified current at T
A
= 55 °C
Peak forward surge current single half
sine-wave superimposed on rated
load
Rating for fusing (t < 8.3 ms)
Operating junction and storage
temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M
3N253
50
35
50
3N254
100
70
100
3N255
200
140
200
3N256
400
280
400
2.0
60
15
-55 to +165
3N257
600
420
600
3N258
800
560
800
3N259
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage drop per
diode
Maximum DC reverse
current at rated DC
blocking voltage per diode
Typical junction
capacitance per diode
SYMBOL
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M
TEST
UNIT
CONDITIONS
3N253
3N254
3N255
3N256
3N257
3N258
3N259
3.14 A
T
A
= 25 °C
I
R
T
J
T
A
= 125 °C
4.0 V,
1 MHz
1.1
5.0
500
25
μA
V
V
F
pF
Revision: 05-Aug-15
Document Number: 88532
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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