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PTFA080551F V1

Description
IC FET RF LDMOS 55W H-37265-2
Categorysemiconductor    Discrete semiconductor   
File Size212KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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PTFA080551F V1 Overview

IC FET RF LDMOS 55W H-37265-2

PTFA080551F V1 Parametric

Parameter NameAttribute value
Transistor typeLDMOS
frequency960MHz
Gain18.5dB
Voltage - Test28V
Rated current10µA
Noise Figure-
Current - Test600mA
Power - output55W
Voltage - Rated65V
Package/casing2-Flat package, blade leads, with flange
Supplier device packagingH-37265-2
PTFA080551E
PTFA080551F
Thermally-Enhanced High Power RF LDMOS FETs
55 W, 869 – 960 MHz
Description
The PTFA080551E and PTFA080551F are 55-watt, internally
matched
GOLDMOS
®
FETs intended for EDGE and CDMA
applications in the 869 to 960 MHz band. Thermally-enhanced
packaging provides the coolest operation available. Full gold
metallization ensures excellent device lifetime and reliability.
PTFA080551E
Package 30265
PTFA080551F
Package 31265
Three-Carrier CDMA2000 Performance
V
DD
= 28 V, I
DQ
= 450 mA, ƒ = 960 MHz
Features
-35
-40
-45
Broadband internal matching
Typical EDGE performance
- Average output power = 26 W
- Gain = 18 dB
- Efficiency = 44%
Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 17 dB
- Efficiency = 67%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 55 W
(CW) output power
Pb-free and RoHS compliant
40
35
Adj. Ch. Power Ratio (dBc)
Efficiency
Drain Efficiency (%)
30
25
20
15
10
5
0
29
31
33
35
37
39
41
43
ACP Low
ACP Up
ALT Up
-50
-55
-60
-65
-70
Output Power, Avg. (dBm)
RF Characteristics
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 26 W, ƒ = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
Typ
2.5
–60
–75
18
44
Max
Unit
%
dBc
dBc
dB
%
η
D
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 01, 2006-03-16

PTFA080551F V1 Related Products

PTFA080551F V1 PTFA080551E V1
Description IC FET RF LDMOS 55W H-37265-2 IC FET RF LDMOS 55W H-36265-2
Transistor type LDMOS LDMOS
frequency 960MHz 960MHz
Gain 18.5dB 18.5dB
Voltage - Test 28V 28V
Rated current 10µA 10µA
Current - Test 600mA 600mA
Power - output 55W 55W
Voltage - Rated 65V 65V
Package/casing 2-Flat package, blade leads, with flange H-36265-2
Supplier device packaging H-37265-2 H-36265-2
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