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IPP35CN10N G

Description
MOSFET N-CH 100V 27A TO220-3
Categorysemiconductor    Discrete semiconductor   
File Size854KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPP35CN10N G Overview

MOSFET N-CH 100V 27A TO220-3

IPP35CN10N G Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)100V
Current - Continuous Drain (Id) at 25°C27A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs35 milliohms @ 27A, 10V
Vgs (th) (maximum value) when different Id4V @ 29µA
Gate charge (Qg) at different Vgs (maximum value)24nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)1570pF @ 50V
FET function-
Power dissipation (maximum)58W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Supplier device packagingPG-TO-220-3
Package/casingTO-220-3
IPB34CN10N G
IPI35CN10N G
IPD33CN10N G
IPP35CN10N G
OptiMOS
2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
Product Summary
V
DS
R
DS(on),max (TO252)
I
D
100
33
27
V
mW
A
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB34CN10N G
IPD33CN10N G
IPI35CN10N G
IPP35CN10N G
Package
Marking
PG-TO263-3
34CN10N
PG-TO252-3
33CN10N
PG-TO262-3
35CN10N
PG-TO220-3
35CN10N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
27
20
108
47
±20
Unit
A
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=27 A,
R
GS
=25
W
mJ
V
W
°C
T
C
=25 °C
58
-55 ... 175
55/175/56
J-STD20 and JESD22
see figure 3
3)
T
jmax
=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.091
page 1
2013-07-25

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