TC1014/TC1015/TC1185
50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown
and Reference Bypass
Features:
• Low Supply Current (50 µA, typical)
• Low Dropout Voltage
• Choice of 50 mA (TC1014), 100 mA (TC1015)
and 150 mA (TC1185) Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Overcurrent and Overtemperature Protection
• Space-Saving 5-Pin SOT-23 Package
• Pin-Compatible Upgrades for Bipolar Regulators
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
General Description
The TC1014/TC1015/TC1185 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
Low Dropout Regulators (LDOs) such as the LP2980.
Designed specifically for battery-operated systems, the
devices’ CMOS construction eliminates wasted ground
current, significantly extending battery life. Total supply
current is typically 50 µA at full load (20 to 60 times
lower than in bipolar regulators).
The devices’ key features include ultra low-noise
operation (plus optional Bypass input), fast response to
step changes in load, and very low dropout voltage,
typically 85 mV (TC1014), 180 mV (TC1015), and
270 mV (TC1185) at full-load. Supply current is
reduced to 0.5 µA (max) and V
OUT
falls to zero when
the shutdown input is low. The devices incorporate both
overtemperature and overcurrent protection.
The TC1014/TC1015/TC1185 are stable with an output
capacitor of only 1 µF and have a maximum output
current of 50 mA, 100 mA and 150 mA, respectively.
For higher output current regulators, please see the
TC1107 (DS21356), TC1108 (DS21357), TC1173
(DS21362) (I
OUT
= 300 mA) data sheets.
Applications:
•
•
•
•
•
•
•
Battery-Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulator for SMPS
Pagers
Package Type
5-Pin SOT-23
V
OUT
5
5
+
1 µF
Typical Application
V
IN
1
V
IN
TC1014
TC1015
TC1185
GND
V
OUT
V
OUT
Bypass
4
TC1014
TC1015
TC1185
1
V
IN
2
3
2
3
GND SHDN
SHDN
Bypass
4
470 pF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
©
2007 Microchip Technology Inc.
DS21335E-page 1
TC1014/TC1015/TC1185
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (V
IN
+ 0.3V)
Power Dissipation................Internally Limited
(Note 7)
Maximum Voltage on Any Pin ........V
IN
+0.3V to -0.3V
Operating Temperature Range...... -40°C < T
J
< 125°C
Storage Temperature..........................-65°C to +150°C
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications:
V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Input Operating Voltage
Maximum Output Current
Symbol
V
IN
I
OUT
MAX
Min
2.7
50
100
150
V
R
– 2.5%
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
V
R
±0.5%
20
40
0.05
0.5
0.5
2
65
85
180
270
50
0.05
64
300
0.04
160
10
Max
6.0
—
—
—
V
R
+ 2.5%
—
—
0c.35
2
3
—
—
120
250
400
80
0.5
—
450
—
—
—
Units
V
mA
Device
—
TC1014
TC1015
TC1185
—
—
—
TC1014; TC1015
TC1185
—
—
—
TC1015; TC1185
TC1185
—
—
—
—
—
—
—
Test Conditions
Note 1
Output Voltage
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
V
OUT
TCV
OUT
ΔV
OUT
/
ΔV
IN
ΔV
OUT
/
V
OUT
V
IN
-V
OUT
V
ppm/°C
%
%
Note 2
Note 3
(V
R
+ 1V)
≤
V
IN
≤
6V
I
L
= 0.1 mA to I
OUT
MAX
I
L
= 0.1 mA to I
OUT
MAX
(Note 4)
I
L
= 100 µA
I
L
= 20 mA
I
L
= 50 mA
I
L
= 100 mA
I
L
= 150 mA
(Note 5)
SHDN = V
IH
, I
L
= 0
SHDN = 0V
F
RE
≤
1 kHz
V
OUT
= 0V
Notes 6, 7
Dropout Voltage
mV
Supply Current
(Note 8)
Shutdown Supply Current
Power Supply Rejection
Ratio
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die
Temperature
Thermal Shutdown
Hysteresis
Note
1:
2:
3:
4:
5:
6:
7:
8:
I
IN
I
INSD
PSRR
I
OUT
SC
ΔV
OUT
/
ΔP
D
T
SD
ΔT
SD
µA
µA
dB
mA
V/W
°C
°C
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
V
R
+ V
DROPOUT
.
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
)x 10
6
V
OUT
x
ΔT
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
Apply for Junction Temperatures of -40°C to +85°C.
DS21335E-page 2
©
2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications:
V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Output Noise
Symbol
eN
Min
—
Typ
600
Max
—
Units
nV/√Hz
Device
—
Test Conditions
I
L
= I
OUT
MAX
,
F = 10 kHz
470 pF from Bypass
to GND
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
SHDN Input High Threshold
SHDN Input Low Threshold
Note
1:
2:
3:
4:
5:
6:
7:
8:
V
IH
V
IL
45
—
—
—
—
15
%V
IN
%V
IN
—
—
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
V
R
+ V
DROPOUT
.
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
)x 10
6
V
OUT
x
ΔT
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
Apply for Junction Temperatures of -40°C to +85°C.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Temperature Ranges:
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
θ
JA
—
256
—
°C/W
T
A
T
A
T
A
-40
-40
-65
—
—
—
+125
+125
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
©
2007 Microchip Technology Inc.
DS21335E-page 3
TC1014/TC1015/TC1185
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise specified, all parts are measured at temperature = +25°C.
Dropout Voltage vs. Temperature
0.020
0.018
Dropout Voltage vs. Temperature
0.100
DROPOUT VOLTAGE (V)
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0.000
C
IN
= 1µF
C
OUT
= 1µF
V
OUT
= 3.3V
I
LOAD
= 50mA
DROPOUT VOLTAGE (V)
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
V
OUT
= 3.3V
I
LOAD
= 10mA
C
IN
= 1µF
C
OUT
= 1µF
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
FIGURE 2-1:
Temperature.
0.200
0.180
DROPOUT VOLTAGE (V)
0.160
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0.000
C
IN
= 1µF
C
OUT
= 1µF
Dropout Voltage vs.
FIGURE 2-4:
Temperature.
Dropout Voltage vs.
Dropout Voltage vs. Temperature
0.300
DROPOUT VOLTAGE (V)
V
OUT
= 3.3V
I
LOAD
= 100mA
Dropout Voltage vs. Temperature
0.250
0.200
0.150
0.100
0.050
0.000
C
IN
= 1µF
C
OUT
= 1µF
V
OUT
= 3.3V
I
LOAD
= 150mA
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
FIGURE 2-2:
Temperature.
Dropout Voltage vs.
FIGURE 2-5:
Temperature.
Dropout Voltage vs.
Ground Current vs. V
IN
90
80
GND CURRENT (µA)
70
60
50
40
30
20
10
0
C
IN
= 1µF
C
OUT
= 1µF
V
OUT
= 3.3V
I
LOAD
= 10mA
GND CURRENT (µA)
90
80
70
60
50
40
30
20
10
0
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 100mA
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1µF
C
OUT
= 1µF
1 1.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
3.5 4
5 5.5
7.5
V
IN
(V)
FIGURE 2-3:
Voltage (V
IN
).
Ground Current vs. Input
FIGURE 2-6:
Voltage (V
IN
).
Ground Current vs. Input
DS21335E-page 4
©
2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note:
Unless otherwise specified, all parts are measured at temperature = +25°C.
Ground Current vs. V
IN
80
70
GND CURRENT (µA)
60
V
OUT
(V)
3.5
V
OUT
vs. V
IN
3
2.5
2
1.5
1
V
OUT
= 3.3V
I
LOAD
= 0
V
OUT
= 3.3V
I
LOAD
= 150mA
50
40
30
20
10
0
C
IN
= 1µF
C
OUT
= 1µF
0.5
0
C
IN
= 1µF
C
OUT
= 1µF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
2.5
3.5
4.5
5.5
6.5 7
V
IN
(V)
3.5 4
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
0.5 1 1.5
5 5.5 6 6.5 7
V
IN
(V)
FIGURE 2-7:
Voltage (V
IN
).
Ground Current vs. Input
FIGURE 2-10:
Output Voltage (V
OUT
) vs.
Input Voltage (V
IN
).
Output Voltage vs. Temperature
3.320
3.315
3.310
V
OUT
= 3.3V
I
LOAD
= 10mA
V
OUT
vs. V
IN
3.5
3.0
2.5
V
OUT
(V)
V
OUT
= 100mA
I
LOAD
= 3.3V
I
LOAD
= 100mA
3.305
2.0
1.5
1.0
0.5
0.0
0
C
IN
= 1µF
C
OUT
= 1µF
V
OUT
(V)
3.300
3.295
3.290
3.285
3.280
3.275
-40
C
IN
= 1µF
C
OUT
= 1µF
V
IN
= 4.3V
-20
-10
0
20
40
TEMPERATURE (
°
C)
85
125
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
FIGURE 2-8:
Output Voltage (V
OUT
) vs.
Input Voltage (V
IN
).
Output Voltage vs. Temperature
3.290
3.288
3.286
V
OUT
(V)
3.284
3.282
3.280
3.278
3.276
3.274
C
IN
= 1µF
C
OUT
= 1µF
V
IN
= 4.3V
V
OUT
= 3.3V
I
LOAD
= 150mA
FIGURE 2-11:
Temperature.
Output Voltage (V
OUT
) vs.
-40
-20
-10
0
20
40
TEMPERATURE (°C)
85
125
FIGURE 2-9:
Temperature.
Output Voltage (V
OUT
) vs.
©
2007 Microchip Technology Inc.
DS21335E-page 5
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