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SMA6J33A

Description
TVS DIODES SMA 600W TR
CategoryDiscrete semiconductor    diode   
File Size760KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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SMA6J33A Overview

TVS DIODES SMA 600W TR

SMA6J33A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage40.6 V
Minimum breakdown voltage36.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation3.3 W
GuidelineIEC-61000-4-2, 4-4
Maximum repetitive peak reverse voltage33 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
TVS Diodes
Surface Mount – 600W > SMA6J series
RoHS
SMA6J Series
Uni-directional
Bi-directional
Description
Pb
e3
The SMA6J series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• Small DO-214AC SMT
footprint for minimal board
space requirement
• Typical failure mode is a
short circuit condition for
current events exceeding
component rating
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC 61000-4-2 ESD
30kV(Air), 30kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• Built-in strain relief
• Glass passivated junction
• Low inductance
• Excellent clamping
capability
• 600W peak pulsepower
capability at 10/1000μs
waveform, repetition rate
(duty cycle): 0.01%
• Fast response time:
typically less than 1.0ps
from 0 Volts to V
BR
min
• Typical I
R
< 1µA when
V
BR
min > 12 V
• High temperature reflow
soldering guaranteed:
260°C/40sec
• V
BR
@ T
J
= V
BR
@25°C
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value
is 0.1%)
• UL Recognized compound
meeting flammability
rating V-0
• Meet MSL level1, per
J-STD-020, lead-frame
maximun peak of 260
°
C
• Matte tin lead–free plated
• Pb-free E3 means 2
nd
level
interconnect is Pb-free
and the terminal finish
material is tin(Sn) (IPC/
JEDEC J-STD-609A.01)
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation by
10/1000μs Waveform (Fig.2)
(Note 1), (Note 2)
Power Dissipation on Infinite Heat
Sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 25A for Unidirectional
Only
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance
Junction to Lead
Typical Thermal Resistance
Junction to Ambient
Symbol
P
PPM
Value
600
Unit
W
P
D
I
FSM
V
F
T
J
T
STG
R
θJL
R
θJA
3.3
60
W
A
3.5
V
-65 to 150
-65 to 175
30
120
°C
°C
°C/W
°C/W
Applications
TVS components are ideal for the protection of I/O
Interfaces, V
CC
bus and other vulnerable circuits used in
Telecom, Computer, Industrial and Consumer electronic
applications.
Notes:
1. Non-repetitive current pulse, per Fig.4 and derated above T
J
(initial) =25ºC per Fig. 3.
2. Mounted on 5.0x5.0mm copper pad to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
component only.
Functional Diagram
Bi-directional
Cathode
Uni-directional
Anode
© 2018 Littelfuse, Inc. Revised: 05/08/18
Specifications are subject to change without notice.
littelfuse.com
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