EEWORLDEEWORLDEEWORLD

Part Number

Search

BAS16TW-TP

Description
DIODE ARRAY GP 75V 150MA SOT363
Categorysemiconductor    Discrete semiconductor   
File Size200KB,2 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
Download Datasheet Parametric Compare View All

BAS16TW-TP Online Shopping

Suppliers Part Number Price MOQ In stock  
BAS16TW-TP - - View Buy Now

BAS16TW-TP Overview

DIODE ARRAY GP 75V 150MA SOT363

BAS16TW-TP Parametric

Parameter NameAttribute value
Diode configuration3 freestanding
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)75V
Current - average rectification (Io) (per diode)150mA(DC)
Voltage at different If - Forward (Vf1.25V @ 150mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)4ns
Current at different Vr - Reverse leakage current1µA @ 75V
Operating Temperature - Junction-65°C ~ 150°C
Installation typesurface mount
Package/casing6-TSSOP,SC-88,SOT-363
Supplier device packagingSOT-363
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BAS16TW
MMBD4148TW
Features
Power dissipation: 200mW (T
amb
=25 )
Forwardcurrent:150mA
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
200mW Switching
Diode
Maximum Ratings
Operating Temperature: -55 to +150
Storage Temperature: -55 to +150
G
SOT-363
B
C
Electrical Characteristics @ 25 C Unless Otherwise Specified
Reverse Voltage
Peak Forward
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Diode Capacitance
Reverse Recovery
Time
V
R
I
F
75V
150mA
0.715V
0.855
1.0V
1.25V
1.0 A
0.025 A
2pF
4ns
I
R
=100
A
A
H
V
F
I
FM
=1mA;
I
FM
=10mA;
I
FM
=50mA;
I
FM
=150mA;
V
R
=75Volts
V
R
=20Volts
K
J
D
M
L
I
R
DIMENSIONS
INCHES
MM
MIN
MAX
0.15
0.35
1.15
1.35
2.15
2.45
0.65Nominal
1.20
1.40
1.80
2.20
---
0.10
0.90
1.10
0.26
0.46
0.08
0.15
C
D
T
rr
Measured at
1.0MHz, V
R
=0V
I
F
=I
R
=10mA,
R
L
=100 OHM
Irr=0.1I
R
6
4
DIM
A
B
C
D
G
H
J
K
L
M
MIN
.006
.045
.085
.026
.047
.071
---
.035
.010
.003
MAX
.014
.053
.096
.055
.087
.004
.043
.018
.006
NOTE
Marking: KA2
A
1
3
Revision:
B
www.mccsemi.com
1 of 2
2013/01/01

BAS16TW-TP Related Products

BAS16TW-TP MMBD4148TW-TP
Description DIODE ARRAY GP 75V 150MA SOT363 DIODE ARRAY GP 75V 150MA SOT363
Diode configuration 3 freestanding 3 freestanding
Diode type standard standard
Voltage - DC Reverse (Vr) (Maximum) 75V 75V
Current - average rectification (Io) (per diode) 150mA(DC) 150mA(DC)
Voltage at different If - Forward (Vf 1.25V @ 150mA 1.25V @ 150mA
speed Small signal =< 200mA (Io), any speed Small signal =< 200mA (Io), any speed
Reverse recovery time (trr) 4ns 4ns
Current at different Vr - Reverse leakage current 1µA @ 75V 1µA @ 75V
Operating Temperature - Junction -65°C ~ 150°C -55°C ~ 150°C
Installation type surface mount surface mount
Package/casing 6-TSSOP,SC-88,SOT-363 6-TSSOP,SC-88,SOT-363
Supplier device packaging SOT-363 SOT-363

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号