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TK72E12N1,S1X

Description
MOSFET N CH 120V 72A TO-220
Categorysemiconductor    Discrete semiconductor   
File Size248KB,9 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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TK72E12N1,S1X Overview

MOSFET N CH 120V 72A TO-220

TK72E12N1,S1X Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)120V
Current - Continuous Drain (Id) at 25°C72A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs4.4 milliohms @ 36A, 10V
Vgs (th) (maximum value) when different Id4V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)130nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)8100pF @ 60V
FET function-
Power dissipation (maximum)255W(Tc)
Operating temperature150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220-3
Package/casingTO-220-3
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