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JAN1N5456C

Description
Variable Capacitance Diode, 100pF C(T), 30V, Silicon, Abrupt, DO-7
CategoryDiscrete semiconductor    diode   
File Size45KB,1 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric View All

JAN1N5456C Overview

Variable Capacitance Diode, 100pF C(T), 30V, Silicon, Abrupt, DO-7

JAN1N5456C Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio2.9
Nominal diode capacitance100 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor200
GuidelineMIL
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationABRUPT
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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