2N3418S thru 2N3421S
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/393
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
These devices are also available in TO-5 and low profile U4 packages. Microsemi also offers
numerous other transistor products to meet higher and lower power ratings with various
switching speed requirements in both through-hole and surface-mount packages.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX and
JANTXV
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
JEDEC registered 2N3418 through 2N3421 series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/393.
RoHS compliant versions available (commercial grade only).
V
CE(sat)
= 0.25 V @ Ic = 1 A.
Rise time t
r
= 0.22 µs max @ I
C
= 1.0 A, I
B1
= 100 mA.
Fall time t
f
= 0.20 µs max @ I
C
= 1.0 A, I
B2
= -10 0 mA.
TO-39
(TO-205AD)
Package
Also available in:
APPLICATIONS / BENEFITS
•
•
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
TO-5 package
(leaded)
2N3418 – 2N3421
U4 package
(surface mount)
2N3418U4 – 2N3421U4
MAXIMUM RATINGS
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
tp <= 1 ms, duty cycle <= 50%
Total Power Dissipation
@ T
A
= +25 °C
(2)
@ T
C
= +100 °C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
stg
2N3418S
2N3420S
60
85
8
3
5
1
5
2N3419S
2N3421S
80
125
Unit
V
V
V
A
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Operating & Storage Junction Temperature Range
Notes:
1. Derate linearly 5.72 mW/°C for T
A
> +25 °C.
2. Derate linearly 150 mW/°C for T
C
> +100 °C.
-65 to +200
T4-LDS-0192-1, Rev. 1 (111684)
©2011 Microsemi Corporation
Page 1 of 6
2N3418S thru 2N3421S
MECHANICAL and PACKAGING
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
MARKING: Part number, date code, manufacturer’s ID.
POLARITY: See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N3418
S
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Short-Leaded package
Symbol
C
obo
I
CEO
I
CEX
I
EBO
h
FE
T
A
V
CEO
V
CBO
V
EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance.
Collector cutoff current, base open.
Collector cutoff current, circuit between base and emitter.
Emitter cutoff current, collector open.
Common-emitter static forward current transfer ratio.
Ambient temperature, free-air temperature.
Collector-emitter voltage, base open.
Collector-emitter voltage, emitter open.
Emitter-base voltage, collector open.
T4-LDS-0192-1, Rev. 1 (111684)
©2011 Microsemi Corporation
Page 2 of 6
2N3418S thru 2N3421S
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Current
I
C
= 50 mA, I
B
= 0
2N3418S, 2N3420S
2N3419S, 2N3421S
Collector-Emitter Cutoff Current
V
BE
= -0.5 V, V
CE
= 80 V
V
BE
= -0.5 V, V
CE
= 120 V
Collector-Base Cutoff Current
V
CE
= 45 V, I
B
= 0
V
CE
= 60 V, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 6.0 V, I
C
= 0
V
EB
= 8.0 V, I
C
= 0
ON CHARACTERISTICS
(1)
Parameters / Test Conditions
Forward-Current Transfer Ratio
I
C
= 100 mA, V
CE
= 2.0 V
I
C
= 1.0 A, V
CE
= 2.0 V
I
C
= 2.0 A, V
CE
= 2.0 V
I
C
= 5.0 A, V
CE
= 5.0 V
Collector-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 0.1 A
I
C
= 2.0 A, I
B
= 0.2 A
Base-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 0.1 A
I
C
= 2.0 A, I
B
= 0.2 A
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
I
C
= 0.1 A, V
CE
= 10 V, f = 20 MHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
NOTES:
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%.
Symbol
V
(BR)CEO
Min.
60
80
Max.
Unit
V
2N3418S, 2N3420S
2N3419S, 2N3421S
I
CEX
0.3
0.3
µA
2N3418S, 2N3420S
2N3419S, 2N3421S
I
CEO
5.0
5.0
µA
I
EBO
0.5
10
µA
Symbol
2N3418S, 2N3419S
2N3420S, 2N3421S
2N3418S, 2N3419S
2N3420S, 2N3421S
h
FE
2N3418S, 2N3419S
2N3420S, 2N3421S
2N3418S, 2N3419S
2N3420S, 2N3421S
V
CE(sat)
Min.
20
40
20
40
15
30
10
15
Max.
Unit
60
120
0.25
0.5
0.6
0.7
1.2
1.4
V
V
BE(sat)
V
Symbol
|h
fe
|
C
obo
Min.
1.3
Max.
0.8
Unit
150
pF
T4-LDS-0192-1, Rev. 1 (111684)
©2011 Microsemi Corporation
Page 3 of 6
2N3418S thru 2N3421S
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted) continued
SWITCHING CHARACTERISTICS
Parameters / Test Conditions (for all symbols)
Delay Time
Rise Time
Storage Time
Fall Time
Turn-Off Time
V
BE(off)
= -3.7 V,
I
C
= 1.0 A, I
B1
= 100 mA
V
BE(off)
= -3.7 V,
I
C
= 1.0 A, I
B2
= -100 mA
V
BE(off)
= -3.7 V, I
C
= 1.0 A,
I
B2
= -100 mA, R
L
= 20 Ω
Symbol
t
d
t
r
t
s
t
f
t
off
Min.
Max.
0.08
0.22
1.10
0.20
1.20
Unit
µs
µs
µs
SAFE OPERATING AREA
(See graph below and reference
MIL-STD-750, method 3053)
DC Test
T
C
= +100 °C, 1 cycle, t > 1.0 s
Test 1
V
CE
= 5.0 V, I
C
= 3.0 A
Test 2
V
CE
= 37 V, I
C
= 0.4 A
Test 3
V
CE
= 60 V, I
C
= 0.185 A
2N3418S, 2N3420S
V
CE
= 80 V, I
C
= 0.12 A
2N3419S, 2N3421S
Clamped Switching
T
A
= +25 °C, I
B
= 0.5 A, I
C
= 3.0 A
COLLECTOR TO EMITTER VOLTAGE V
CE
(VOLTS)
Maximum Safe Operating Area (continuous dc)
T4-LDS-0192-1, Rev. 1 (111684)
COLLECTOR CURRENT I
C
(AMPERES)
©2011 Microsemi Corporation
Page 4 of 6
2N3418S thru 2N3421S
GRAPHS
DC Operation Maximum Rating (W)
T
C
(
C
) (Case)
o
FIGURE 1
Temperature-Power Derating Curve
NOTES:
Thermal Resistance Junction to Case = 4.5
o
C/W
o
Max Finish-Alloy Temp = 175.0 C
THETA (
o
C/W)
TIME (s)
FIGURE 2
Maximum Thermal Impedance
NOTE:
T
C
= +25 °C, Thermal Resistance R
θJC
= 4.5 °C/W
T4-LDS-0192-1, Rev. 1 (111684)
©2011 Microsemi Corporation
Page 5 of 6
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