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MTZJ39SG R0G

Description
DIODE ZENER 39.87V 500MW DO34
Categorysemiconductor    Discrete semiconductor   
File Size289KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

MTZJ39SG R0G Overview

DIODE ZENER 39.87V 500MW DO34

MTZJ39SG R0G Parametric

Parameter NameAttribute value
Voltage - Zener (nominal) (Vz)39.87V
Tolerance±2%
Power - Max500mW
Impedance (max) (Zzt)85 Ohms
Current at different Vr - Reverse leakage current200nA @ 30V
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Package/casingDO-204AG, DO-34, axial
Supplier device packagingDO-34
MTZJ2V0SA - MTZJ56S
Taiwan Semiconductor
500mW, 2V-56V Zener Diodes
FEATURES
● Wide zener voltage range selection: 2.0V to 56V
● Hermetically sealed glasss
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
D
T
J
MAX
VALUE
2.0 - 56
5
500
175
DO-34
Single die
UNIT
V
mA
mW
°C
APPLICATIONS
Low voltage stabilizers or voltage references
Adapters
Lighting application
On-board DC/DC converter
Package
Configuration
MECHANICAL DATA
Case: DO-34
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 92 mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Power dissipation
Junction temperature range
Storage temperature
SYMBOL
P
D
T
J
T
STG
VALUE
500
-55 to +175
-55 to +175
UNIT
mW
°C
°C
1
Version: C1804

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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