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GP10M-062M3/54

Description
DIODE GEN PURPOSE DO204AL
Categorysemiconductor    Discrete semiconductor   
File Size73KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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GP10M-062M3/54 Overview

DIODE GEN PURPOSE DO204AL

GP10A thru GP10Y
www.vishay.com
Vishay General Semiconductor
Glass Passivated Junction Plastic Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
SUPERECTIFIER
®
DO-204AL (DO-41)
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for both
consumer and automotive applications.
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
Diode variations
DO-204AL (DO-41)
1.0 A
50 V to 1600 V
30 A, 25 A
5.0 μA
1.1 V, 1.2 V, 1.3 V
175 °C
Single die
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
Note
• For part numbers with “E” suffix, they are”-M3” commercial
grade only
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum full load reverse current, full cycle
average, 0.375" (9.5 mm) lead length at T
A
= 75 °C
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
R(AV)
T
J
, T
STG
- 65 to + 175
30
30
- 65 to + 150
A
B
D
G
J
K
M
N
Q
T
V
W
Y
UNIT
V
A
25
A
μA
°C
50 to 1600 (fig. 5)
1.0
Revision: 28-May-13
Document Number: 89287
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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