UK2996L-TF3-T datasheet, PDF - EEWORLD Datasheet

UK2996L-TF3-T: Description600V SILICON N-CHANNEL POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size126KB，6 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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UK2996L-TF3-T Overview

600V SILICON N-CHANNEL POWER MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compli
Avalanche Energy Efficiency Rating (Eas)	252 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	30 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	UK2996L-TF3-T	UK2996	UK2996-TA3-T	UK2996-TF3-T	UK2996L-TA3-T
Description	600V SILICON N-CHANNEL POWER MOSFET	600V SILICON N-CHANNEL POWER MOSFET	Transistor	Transistor	600V SILICON N-CHANNEL POWER MOSFET

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