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1S2075(K)RF

Description
Rectifier Diode, 1 Element, 0.1A, Silicon, DO-35
CategoryDiscrete semiconductor    diode   
File Size73KB,2 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

1S2075(K)RF Overview

Rectifier Diode, 1 Element, 0.1A, Silicon, DO-35

1S2075(K)RF Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.8 V
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current0.6 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum reverse current0.1 µA
Maximum reverse recovery time0.008 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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