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H11B1SD

Description
OPTOISO 5.3KV DARL W/BASE 6SMD
CategoryLED optoelectronic/LED   
File Size159KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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H11B1SD Overview

OPTOISO 5.3KV DARL W/BASE 6SMD

H11B1SD Parametric

Parameter NameAttribute value
Number of channels1
Voltage - Isolation5300Vrms
Current transfer ratio (minimum value)500% @ 1mA
Current transfer ratio (maximum)-
Open/close time (typ.)25µs,18µs
Rise/Fall Time (Typical)-
input typeDC
Output typeDarlington transistor with base
Voltage - Output (maximum)25V
Current - Output/Channel-
Voltage - Forward (Vf) (Typical)1.2V
Current - DC Forward (If)100mA
Vce saturation value (maximum value)1V
Operating temperature-55°C ~ 100°C
Installation typesurface mount
Package/casing6-SMD, gull wing
Supplier device packaging6-SMD

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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