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HSM835GE3/TR13

Description
DIODE SCHOTTKY 35V 8A DO215AB
CategoryDiscrete semiconductor    diode   
File Size106KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

HSM835GE3/TR13 Overview

DIODE SCHOTTKY 35V 8A DO215AB

HSM835GE3/TR13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
package instructionR-PDSO-G2
Reach Compliance Codecompliant
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.62 V
JEDEC-95 codeDO-215AB
JESD-30 codeR-PDSO-G2
Maximum non-repetitive peak forward current350 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage35 V
Maximum reverse current250 µA
Reverse test voltage35 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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