EEWORLDEEWORLDEEWORLD

Part Number

Search

XC2311V2B0CL

Description
VCXO ICs with Built-in Variable Capacitor
File Size191KB,12 Pages
ManufacturerTOREX
Websitehttp://www.torex.co.jp/chinese/
Download Datasheet View All

XC2311V2B0CL Overview

VCXO ICs with Built-in Variable Capacitor

XC2311
Series
VCXO ICs with Built-in Variable Capacitor
ETR1408_005
■GENERAL
DESCRIPTION
The XC2311 Series is VCXO (Voltage Controlled Crystal Oscillator) ICs with built-in variable capacitor diode.
With the originally developed variable capacitor diode and a constant-voltage circuit built-in, the series achieves the wide
variable frequency range, frequency stability to supply voltage and low power consumption.
By combining with the AT-cut crystal oscillator, the ultra small and highly accurate Frequency Voltage Controlled Crystal
Oscillator of 16 to 50MHz can be formed.
The small SOT-26, USP-6C, and SOP-8 packages make high density mounting possible.
■APPLICATIONS
●VCXO
modules
●Communication
equipment
■FEATURES
Supply Voltage Range
Output Frequency Range
: 2.6V ~ 3.6V
: 16MHz ~ 50MHz
(V2B0 = 16MHz~36MHz,
V3B0 = 30MHz~50MHz)*
Pull Range
: more than
±110ppm
(XC2311V2B0xx,
V
C
= 1.65V±1.35V)
Output Waveform Symmetry
: 50% /±5 %
Operating Ambient Temperature
: - 40℃ ~ +85℃
Supply Current
: 3mA (TYP.)
(when VDD is 3.6V, 27MHz
and output is enable)
CMOS Output
Ultra Small Packages
Chip Form
details.
: SOT-26, USP-6C, SOP-8
: Chip size 1000 x 750μm
* Please refer to the Electrical Characteristics for versions’
■CHIP
PAD LAYOUT
■PAD
COORDINATE
PAD NAME
VC
OE (/INH)
VSS
OUT(Q)
VDD
X2
X1
PAD No.
1
2
3
4
5
6
7
X (μm)
359
359
359
-359
-359
-132
132
Y (μm)
-244
44
244
179
-244
-244
-244
* The coordinate origin of XY-coordinate is a chip center.
Unit (μm)
Pad Size
Chip Thickness
80 x 80
μm
200 + 10
μm
1/12
FAQ_ How to implement RX-TX switching control
Author: Joshua Zhu, ST engineer Click to download the pdf document:Problem: Some customers want to develop products using BlueNCG-132 and want to add an external PALNA to extend the range of the RF sy...
nmg ST - Low Power RF
Thank you for being there + bow deeply
① Throughout life, we should have a grateful heart, no matter they are parents or friends, colleagues or forum members, familiar or unfamiliar people... In the past year, in life, work or spirit, when...
eelw Talking
How to view the complex technical documentation of TI DSP
When learning DSP development, I often feel that there are too many technical documents. Every book is useful and I want to read every book, but I don't know where to start. At this time, the principl...
Jacktang DSP and ARM Processors
Please help analyze this circuit.
See a battery switching circuit, as shown below, 1. Q1 and Q2 are NMOS tubes, Q3, Q4 and Q5 are PMOS tubes, and D1 is a diode. 2. BAT1 and BAT2 are batteries. The capacity of BAT2 is larger than that ...
灞波儿奔 Power technology

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号