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934057735127

Description
Power Field-Effect Transistor
CategoryThe transistor   
File Size296KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

934057735127 Overview

Power Field-Effect Transistor

934057735127 Parametric

Parameter NameAttribute value
MakerNexperia
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)120 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage75 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.013 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)240 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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