FS100R12KT4GB11BOSA1 datasheet, PDF

FS100R12KT4GB11BOSA1: DescriptionIGBT MODULE VCES 600V 100A; CategoryDiscrete semiconductor The transistor; File Size471KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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FS100R12KT4GB11BOSA1 Overview

IGBT MODULE VCES 600V 100A

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	FLANGE MOUNT, R-XUFM-X35
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	16 weeks
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Collector-emitter maximum voltage	1200 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 code	R-XUFM-X35
Number of components	6
Number of terminals	35
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	570 ns
Nominal on time (ton)	165 ns

	FS100R12KT4GB11BOSA1	FS100R12KT4GB11
Description	IGBT MODULE VCES 600V 100A	IGBT Modules
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	Hex

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