RN4984FE,LF(CB datasheet, PDF - EEWORLD Datasheet

RN4984FE,LF(CB: DescriptionTRANS NPN/PNP PREBIAS 0.1W ES6; Categorysemiconductor Discrete semiconductor; File Size280KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN4984FE,LF(CB Overview

TRANS NPN/PNP PREBIAS 0.1W ES6

Parameter Name	Attribute value
Transistor type	1 NPN, 1 PNP - prebiased (dual)
Current - Collector (Ic) (Maximum)	100mA
Voltage - collector-emitter breakdown (maximum)	50V
Resistor - Substrate (R1)	47 kiloohms
Resistor - Emitter Base (R2)	47 kiloohms
DC current gain (hFE) at different Ic, Vce (minimum value)	80 @ 10mA，5V
Vce saturation value (maximum value) when different Ib,Ic	300mV @ 250µA，5mA
Current - collector cutoff (maximum)	100nA（ICBO）
Frequency - Transition	250MHz
Power - Max	100mW
Installation type	surface mount
Package/casing	SOT-563，SOT-666
Supplier device packaging	ES6

	RN4984FE,LF(CB	RN4984FE,LF(CT	RN4984FE(T5L,F,T)
Description	TRANS NPN/PNP PREBIAS 0.1W ES6	trans prebias npn/pnp 50v es6	tran dual npn/pnp 50v 100ma es6

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