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AOTF4126

Description
MOSFET N-CH 100V 6A TO220F
Categorysemiconductor    Discrete semiconductor   
File Size367KB,7 Pages
ManufacturerAOS
Websitehttp://www.aosmd.com
Environmental Compliance
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AOTF4126 Overview

MOSFET N-CH 100V 6A TO220F

AOTF4126 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)100V
Current - Continuous Drain (Id) at 25°C6A(Ta),27A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)7V,10V
Rds On (maximum value) when different Id, Vgs24 milliohms @ 20A, 10V
Vgs (th) (maximum value) when different Id4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)42nC @ 10V
Vgs (maximum value)±25V
Input capacitance (Ciss) at different Vds (maximum value)2200pF @ 50V
FET function-
Power dissipation (maximum)2.1W(Ta),42W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220-3F
Package/casingTO-220-3 whole package

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