MOSFET N-CH 100V 6A TO220F
Parameter Name | Attribute value |
FET type | N channel |
technology | MOSFET (metal oxide) |
Drain-source voltage (Vdss) | 100V |
Current - Continuous Drain (Id) at 25°C | 6A(Ta),27A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) | 7V,10V |
Rds On (maximum value) when different Id, Vgs | 24 milliohms @ 20A, 10V |
Vgs (th) (maximum value) when different Id | 4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) | 42nC @ 10V |
Vgs (maximum value) | ±25V |
Input capacitance (Ciss) at different Vds (maximum value) | 2200pF @ 50V |
FET function | - |
Power dissipation (maximum) | 2.1W(Ta),42W(Tc) |
Operating temperature | -55°C ~ 175°C(TJ) |
Installation type | Through hole |
Supplier device packaging | TO-220-3F |
Package/casing | TO-220-3 whole package |