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NRVHP420MFDT1G

Description
200V/2A PUF DFN-8
Categorysemiconductor    Discrete semiconductor   
File Size60KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NRVHP420MFDT1G Overview

200V/2A PUF DFN-8

NRVHP420MFDT1G Parametric

Parameter NameAttribute value
Diode configuration2 freestanding
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)200V
Current - average rectification (Io) (per diode)2A
Voltage at different If - Forward (Vf1.1V @ 6A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)30ns
Current at different Vr - Reverse leakage current500nA @ 200V
Operating Temperature - Junction-55°C ~ 175°C
Installation typesurface mount
Package/casing8-PowerTDFN
Supplier device packaging8-DFN (5x6) Dual Marker (SO8FL - Dual Channel)

NRVHP420MFDT1G Related Products

NRVHP420MFDT1G NRVHP420MFDWFT1G NRVHP420MFDT3G NRVHP420MFDWFT3G
Description 200V/2A PUF DFN-8 Rectifiers 200V/2A PUF DFN-8 200V/2A PUF DFN-8 200V/2A PUF DFN-8
Diode configuration 2 freestanding - 2 freestanding 2 freestanding
Diode type standard - standard standard
Voltage - DC Reverse (Vr) (Maximum) 200V - 200V 200V
Current - average rectification (Io) (per diode) 2A - 2A 2A
Voltage at different If - Forward (Vf 1.1V @ 6A - 1.1V @ 6A 1.1V @ 6A
speed Fast recovery = < 500 ns, > 200mA (Io) - Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr) 30ns - 30ns 30ns
Current at different Vr - Reverse leakage current 500nA @ 200V - 500nA @ 200V 500nA @ 200V
Operating Temperature - Junction -55°C ~ 175°C - -55°C ~ 175°C -55°C ~ 175°C
Installation type surface mount - surface mount surface mount
Package/casing 8-PowerTDFN - 8-PowerTDFN 8-PowerTDFN
Supplier device packaging 8-DFN (5x6) Dual Marker (SO8FL - Dual Channel) - 8-DFN (5x6) Dual Marker (SO8FL - Dual Channel) 8-DFN (5x6) Dual Marker (SO8FL - Dual Channel)

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