MCP6V81/1U/2/4
5 MHz, 0.5 mA, Zero-Drift Op Amps
Features
• High DC Precision:
- V
OS
Drift: ±20 nV/°C (maximum, V
DD
= 5.5V)
- V
OS
: ±9 µV (maximum)
- A
OL
: 126 dB (minimum, V
DD
= 5.5V)
- PSRR: 117 dB (minimum, V
DD
= 5.5V)
- CMRR: 118 dB (minimum, V
DD
= 5.5V)
- E
ni
: 0.28 µV
P-P
(typical), f = 0.1 Hz to 10 Hz
- E
ni
: 0.1 µV
P-P
(typical), f = 0.01 Hz to 1 Hz
• Enhanced EMI Protection:
- Electromagnetic Interference Rejection Ratio
(EMIRR) at 1.8 GHz: 101 dB
• Low Power and Supply Voltages:
- I
Q
: 0.5 mA/amplifier (typical)
- Wide supply voltage range: 2.2V to 5.5V
• Small Packages:
- Singles in SC70, SOT-23
- Duals in MSOP-8, 2x3 TDFN
- Quads in TSSOP-14
• Easy to Use:
- Rail-to-rail input/output
- Gain Bandwidth Product: 5 MHz (typical)
- Unity Gain Stable
• Extended Temperature Range: -40°C to +125°C
Description
The
Microchip
Technology
Incorporated
MCP6V81/1U/2/4 family of operational amplifiers
provides input offset voltage correction for very low
offset and offset drift. These devices have a gain
bandwidth product of 5 MHz (typical). They are
unity-gain stable, have virtually no 1/f noise and have
good Power Supply Rejection Ratio (PSRR) and
Common Mode Rejection Ratio (CMRR). These
products operate with a single supply voltage as low as
2.2V, while drawing 500 µA/amplifier (typical) of
quiescent current.
The MCP6V81/1U/2/4 family has enhanced EMI
protection
to
minimize
any
electromagnetic
interference from external sources. This feature makes
it well suited for EMI-sensitive applications such as
power
lines,
radio
stations
and
mobile
communications, etc.
The MCP6V81/1U/2/4 op amps are offered in single
(MCP6V81 and MCP6V81U), dual (MCP6V82) and
quad (MCP6V84) packages. They were designed
using an advanced CMOS process.
Package Types
MCP6V81
SOT-23
V
OUT
1
V
SS
2
V
IN
+ 3
5 V
DD
4 V
IN
-
MCP6V82
MSOP
V
OUTA
V
INA
–
V
INA
+
V
SS
1
2
3
4
8
7
6
5
V
DD
V
OUTA
V
OUTB
V
INA
-
V
INB
- V
INA
+
V
SS
V
INB
+
MCP6V84
TSSOP
1
2
3
4
V
INB
+ 5
V
INB
- 6
V
OUTB
7
V
OUTA
V
INA
-
V
INA
+
V
DD
14 V
OUTD
13 V
IND
-
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
-
8 V
OUTC
MCP6V81U
SC70, SOT-23
V
IN
+ 1
V
SS
2
V
IN
– 3
5 V
DD
4 V
OUT
Typical Applications
•
•
•
•
•
Portable Instrumentation
Sensor Conditioning
Temperature Measurement
DC Offset Correction
Medical Instrumentation
MCP6V82
2×3 TDFN *
1
2
3
4
EP
9
8 V
DD
7 V
OUTB
6 V
INB
-
5 V
INB
+
Design Aids
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
Related Parts
•
•
•
•
•
MCP6V11/1U/2/4: Zero-Drift, Low Power
MCP6V31/1U/2/4: Zero-Drift, Low Power
MCP6V61/1U/2/4: Zero-Drift, 1 MHz
MCP6V71/1U/2/4: Zero-Drift, 2 MHz
MCP6V91/1U/2/4: Zero-Drift, 10 MHz
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2016 Microchip Technology Inc.
DS20005419B-page 1
MCP6V81/1U/2/4
Typical Application Circuit
V
IN
R
1
R
2
-
+
C
2
R
4
R
5
-
+
R
2
8
Input Offset Voltage (µV)
R
3
V
OUT
Figures 1
and
2
show the input offset voltage of the
single-channel device MCP6V81/1U versus the
ambient temperature for different power supply
voltages.
27 Samples
V
DD
= 2.2V
U
1
MCP6XXX
6
4
2
0
-2
-4
-6
-8
V
DD
/2
U
2
MCP6V81
V
DD
/2
Offset Voltage Correction for Power Driver
-50
-25
0
25
50
75
Ambient Temperature (°C)
100
125
FIGURE 1:
Input Offset Voltage vs.
Ambient Temperature with V
DD
= 2.2V.
8
Input Offset Voltage (µV)
6
4
2
0
-2
-4
-6
-8
-50
-25
0
25
50
75
Ambient Temperature (°C)
100
125
27 Samples
V
DD
= 5.5V
FIGURE 2:
Input Offset Voltage vs.
Ambient Temperature with V
DD
= 5.5V.
As seen in
Figures 1
and
2,
the MCP6V81/1U op amps
have excellent performance across temperature. The
input offset voltage temperature drift (TC
1
) shown is
well within the specified maximum values of 20 nV/°C
at V
DD
= 5.5V and 25 nV/°C at V
DD
= 2.2V.
This performance supports applications with stringent
DC precision requirements. In many cases, it will not be
necessary to correct for temperature effects (i.e.,
calibrate) in a design. In the other cases, the correction
will be small.
DS20005419B-page 2
2016 Microchip Technology Inc.
MCP6V81/1U/2/4
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
.................................................................................................................................................................6.5V
Current at Input Pins ..............................................................................................................................................±2 mA
Analog Inputs (V
IN
+ and V
IN
-)
(1)
...............................................................................................V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ....................................................................................................V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage .................................................................................................................................|V
DD
– V
SS
|
Output Short Circuit Current ........................................................................................................................... Continuous
Current at Output and Supply Pins ...................................................................................................................... ±30 mA
Storage Temperature .............................................................................................................................-65°C to +150°C
Maximum Junction Temperature .......................................................................................................................... +150°C
ESD protection on all pins (HBM, CDM, MM)
MCP6V81/1U
4 kV, 1.5 kV, 400V
MCP6V82/4
4 kV, 1.5 kV, 300V
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1:
See
Section 4.2.1 “Rail-to-Rail Inputs”.
1.2
Specifications
DC ELECTRICAL SPECIFICATIONS
TABLE 1-1:
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.2V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3, V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ to V
L
and C
L
= 30 pF (refer to
Figures 1-4
and
1-5).
Parameters
Input Offset
Input Offset Voltage
Input Offset Voltage Drift with Temperature
(Linear Temperature Coefficient)
V
OS
TC
1
-9
-25
-20
—
TC
2
∆V
OS
—
—
—
—
—
±30
±20
±0.25
+9
+25
+20
—
—
—
µV
nV/°C
nV/°C
T
A
= +25°C
T
A
= -40 to +125°C,
V
DD
= 2.2V
(Note
1)
T
A
= -40 to +125°C,
V
DD
= 5.5V
(Note
1)
Sym.
Min.
Typ.
Max.
Units
Conditions
Input Offset Voltage Quadratic
Temperature Coefficient
pV/°C
2
T
A
= -40 to +125°C
V
DD
= 2.2V
pV/°C
2
T
A
= -40 to +125°C
V
DD
= 5.5V
µV
408 hours Life Test
at +150°,
measured at +25°C.
Input Offset Voltage Aging
Power Supply Rejection Ratio
Note 1:
2:
PSRR
117
127
—
dB
For design guidance only; not tested.
Figure 2-19
shows how V
CML
and V
CMH
changed across temperature for the first production lot.
2016 Microchip Technology Inc.
DS20005419B-page 3
MCP6V81/1U/2/4
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.2V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3, V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ to V
L
and C
L
= 30 pF (refer to
Figures 1-4
and
1-5).
Parameters
Input Bias Current and Impedance
Input Bias Current
Input Bias Current across Temperature
Input Offset Current
Input Offset Current across Temperature
Common-mode Input Impedance
Differential Input Impedance
Common Mode
Common-mode
Input Voltage Range Low
Common-mode
Input Voltage Range High
Common-mode Rejection Ratio
V
CML
V
CMH
CMR
R
CMR
R
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
A
OL
A
OL
Output
Minimum Output Voltage Swing
V
OL
V
OL
Maximum Output Voltage Swing
V
OH
V
OH
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Power-on Reset (POR) Trip Voltage
Note 1:
2:
V
DD
I
Q
V
POR
2.2
250
1.2
—
500
1.6
5.5
770
1.9
V
µA
V
I
O
= 0
I
SC
I
SC
V
SS
—
V
DD
–
120
—
—
—
V
SS
+35
V
SS
+5
V
DD
–45
V
DD
–5
±15
±40
V
SS
+120
—
V
DD
—
—
—
mV
mV
mV
mV
mA
mA
R
L
= 1 kΩ, G = +2,
0.5V input overdrive
R
L
= 10 kΩ, G = +2,
0.5V input overdrive
R
L
= 1 kΩ, G = +2,
0.5V input overdrive
R
L
= 10 kΩ, G = +2,
0.5V input overdrive
V
DD
= 2.2V
V
DD
= 5.5V
119
126
146
151
—
—
dB
dB
V
DD
= 2.2V,
V
OUT
= 0.3V to 2.0V
V
DD
= 5.5V,
V
OUT
= 0.3V to 5.3V
—
V
DD
+0.
3
112
—
—
128
V
SS
–0.2
—
—
V
V
dB
Note 2
Note 2
V
DD
= 2.2V,
V
CM
= -0.2V to 2.5V
(Note
2)
V
DD
= 5.5V,
V
CM
= -0.2V to 5.8V
(Note
2)
I
B
I
B
I
B
I
OS
I
OS
I
OS
Z
CM
Z
DIFF
-50
—
0
-400
—
-500
—
—
±2
+10
+0.24
±100
±75
±100
10
13
||14
10
13
||3
+50
—
+1
+400
—
+500
—
—
pA
pA
nA
pA
pA
pA
Ω||pF
Ω||pF
T
A
= +85°C
T
A
= +125°C
T
A
= +85°C
T
A
= +125°C
Sym.
Min.
Typ.
Max.
Units
Conditions
118
136
—
dB
For design guidance only; not tested.
Figure 2-19
shows how V
CML
and V
CMH
changed across temperature for the first production lot.
DS20005419B-page 4
2016 Microchip Technology Inc.
MCP6V81/1U/2/4
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.2V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3, V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ to V
L
and C
L
= 30 pF (refer to
Figures 1-4
and
1-5).
Parameters
Amplifier AC Response
Gain Bandwidth Product
Slew Rate
Phase Margin
Amplifier Noise Response
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Amplifier Distortion
(1)
Intermodulation Distortion (AC)
Amplifier Step Response
Start-Up Time
Offset Correction Settling Time
Output Overdrive Recovery Time
EMI Protection
EMI Rejection Ratio
EMIRR
—
—
—
—
Note 1:
2:
3:
90
100
101
105
—
—
—
—
dB
V
IN
= 0.1 V
PK
, f = 400 MHz
V
IN
= 0.1 V
PK
, f = 900 MHz
V
IN
= 0.1 V
PK
, f = 1800 MHz
V
IN
= 0.1 V
PK
, f = 2400 MHz
t
STR
t
STL
t
ODR
—
—
—
100
30
60
—
—
—
µs
µs
µs
G = +1, 0.1% V
OUT
settling
(Note
2)
G = +1, V
IN
step of 2V,
V
OS
within 100 µV of its final value
G = -10, ±0.5V input overdrive to V
DD
/2,
V
IN
50% point to V
OUT
90% point
(Note
3)
IMD
—
100
—
µV
PK
V
CM
tone = 100 mV
PK
at 1 kHz,
G
N
= 11, RTI
E
ni
E
ni
e
ni
i
ni
—
—
—
—
0.1
0.28
13
6
—
—
—
—
µV
P-P
µV
P-P
fA/√Hz
f = 0.01 Hz to 1 Hz
f = 0.1 Hz to 10 Hz
GBWP
SR
PM
—
—
—
5
4
60
—
—
—
MHz
V/µs
°C
G = +1
Sym.
Min.
Typ.
Max.
Units
Conditions
nV/√Hz f < 2 kHz
These parameters were characterized using the circuit in
Figure 1-6.
In
Figures 2-40
and
2-41,
there is an IMD
tone at DC, a residual tone at 1 kHz and other IMD tones and clock tones. IMD is Referred to Input (RTI).
High gains behave differently; see
Section 4.3.3 “Offset at Power-Up”.
t
STL and
t
ODR
include some uncertainty due to clock edge timing.
TABLE 1-3:
TEMPERATURE SPECIFICATIONS
Parameters
Sym.
T
A
T
A
T
A
JA
JA
JA
JA
JA
Min.
-40
-40
-65
—
—
—
—
—
Typ.
—
—
—
209
201
53
211
100
Max.
+125
+125
+150
—
—
—
—
—
Units
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
Note 1
Conditions
Electrical Characteristics:
Unless otherwise indicated, all limits are specified for: V
DD
= +2.2V to +5.5V, V
SS
= GND.
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5LD-SC70
Thermal Resistance, 5LD-SOT-23
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-TSSOP
Note 1:
Operation must not cause T
J
to exceed Maximum Junction Temperature specification (+150°C).
2016 Microchip Technology Inc.
DS20005419B-page 5
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