495220TU datasheet, PDF - EEWORLD Datasheet

495220TU: DescriptionTRANS NPN DARL 325V 4A TO-220; Categorysemiconductor Discrete semiconductor; File Size93KB，2 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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TRANS NPN DARL 325V 4A TO-220

Parameter Name	Attribute value
Transistor type	NPN - Darlington
Current - Collector (Ic) (Maximum)	4A
Voltage - collector-emitter breakdown (maximum)	325V
Vce saturation value (maximum value) when different Ib,Ic	1.5V @ 5mA，2A
Current - collector cutoff (maximum)	5mA（ICBO）
DC current gain (hFE) at different Ic, Vce (minimum value)	1000 @ 3A，5V
Power - Max	40W
Frequency - Transition	-
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	Through hole
Package/casing	TO-220-3
Supplier device packaging	TO-220

	495220TU
Description	TRANS NPN DARL 325V 4A TO-220
Transistor type	NPN - Darlington
Current - Collector (Ic) (Maximum)	4A
Voltage - collector-emitter breakdown (maximum)	325V
Vce saturation value (maximum value) when different Ib,Ic	1.5V @ 5mA，2A
Current - collector cutoff (maximum)	5mA（ICBO）
DC current gain (hFE) at different Ic, Vce (minimum value)	1000 @ 3A，5V
Power - Max	40W
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	Through hole
Package/casing	TO-220-3
Supplier device packaging	TO-220

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