FJY4005R PNP Epitaxial Silicon Transistor
July
2007
FJY4005R
PNP Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=4.7KΩ, R
2
=10KΩ)
• Complement to FJY3005R
tm
Equivalent Circuit
C
C
E
S55
B
E
B
SOT
-
523F
Absolute Maximum Ratings *
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
T
a
= 25°C unless otherwise noted
Parameter
Value
-50
-50
-10
-100
-55~150
150
200
Units
V
V
V
mA
°C
°C
mW
T
STG
T
J
P
C
Storage Temperature Range
Junction Temperature
Collector Power Dissipation
, by R
θJA
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics*
T =25°C unless otherwise noted
a
Symbol
R
θJA
* Minimum land pad size.
Parameter
Thermal Resistance, Junction to Ambient
Max
600
Units
°C/W
Electrical Characteristics*
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
h
FE
V
CE(
sat
)
f
T
C
cb
V
I(
off
)
V
I(
on)
R
1
R
1
/R
2
T
C
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output
Capacitance
Test Condition
I
C
= -10 uA, I
E
= 0
I
C
= -100 uA, I
B
= 0
V
CB
= -40 V, I
E
= 0
V
CE
= -5 V, I
C
= -5mA
I
C
= -10 mA, I
B
= -0.5 mA
V
CE
= -10V, I
C
= -5 mA
V
CB
= -10 V, I
E
= 0, f = 1.0 MHz
V
CE
= -5 V, I
C
= -100uA
V
CE
= -0.3V, I
C
= -20mA
MIN
-50
-50
Typ
MAX
Units
V
V
-0.1
30
-0.3
200
5.5
-0.3
-2.5
3.2
0.42
4.7
0.47
6.2
0.52
uA
V
MHz
pF
V
V
KΩ
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJY4005R Rev.
B
FJY4005R PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC current Gain
1000
Figure 2. Input On Voltage
-100
V
I
(on)[V], INPUT VOLTAGE
V
CE
= - 5V
R
1
= 4.7K
R
2
= 10K
V
CE
= - 0.3V
R
1
= 4.7K
R
2
= 10K
-10
h
FE
, DC CURRENT GAIN
100
10
-1
1
-0.1
-1
-10
-100
-0.1
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. Input off Voltage
-10k
Figure 4. Power Derating
280
I
C
[
µ
A], COLLECTOR CURRENT
-1k
P
C
[mW], POWER DISSIPATION
V
CE
= - 5V
R
1
= 4.7K
R
2
= 10K
240
200
160
-100
120
80
-10
40
-1
-0.1
0
-0.3
-0.5
-0.7
-0.9
-1.1
-1.3
-1.5
-1.7
-1.9
-2.1
0
25
50
o
75
100
125
150
175
V
I
(off)[V], INPUT OFF VOLTAGE
T
a
[ C], AMBIENT TEMPERATURE
2
FJY4005R Rev.
B
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which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
Product Status
Formative or In Design
First Production
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I25
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Full Production
Obsolete
Not In Production
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