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FJY4005R

Description
TRANS PREBIAS PNP 200MW SOT523F
Categorysemiconductor    Discrete semiconductor   
File Size220KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FJY4005R Overview

TRANS PREBIAS PNP 200MW SOT523F

FJY4005R Parametric

Parameter NameAttribute value
Transistor typePNP - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)4.7 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)30 @ 5mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 500µA,10mA
Current - collector cutoff (maximum)100nA(ICBO)
Frequency - Transition200MHz
Power - Max200mW
Installation typesurface mount
Package/casingSC-89,SOT-490
Supplier device packagingSOT-523F
FJY4005R PNP Epitaxial Silicon Transistor
July
2007
FJY4005R
PNP Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=4.7KΩ, R
2
=10KΩ)
• Complement to FJY3005R
tm
Equivalent Circuit
C
C
E
S55
B
E
B
SOT
-
523F
Absolute Maximum Ratings *
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
T
a
= 25°C unless otherwise noted
Parameter
Value
-50
-50
-10
-100
-55~150
150
200
Units
V
V
V
mA
°C
°C
mW
T
STG
T
J
P
C
Storage Temperature Range
Junction Temperature
Collector Power Dissipation
, by R
θJA
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics*
T =25°C unless otherwise noted
a
Symbol
R
θJA
* Minimum land pad size.
Parameter
Thermal Resistance, Junction to Ambient
Max
600
Units
°C/W
Electrical Characteristics*
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
h
FE
V
CE(
sat
)
f
T
C
cb
V
I(
off
)
V
I(
on)
R
1
R
1
/R
2
T
C
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output
Capacitance
Test Condition
I
C
= -10 uA, I
E
= 0
I
C
= -100 uA, I
B
= 0
V
CB
= -40 V, I
E
= 0
V
CE
= -5 V, I
C
= -5mA
I
C
= -10 mA, I
B
= -0.5 mA
V
CE
= -10V, I
C
= -5 mA
V
CB
= -10 V, I
E
= 0, f = 1.0 MHz
V
CE
= -5 V, I
C
= -100uA
V
CE
= -0.3V, I
C
= -20mA
MIN
-50
-50
Typ
MAX
Units
V
V
-0.1
30
-0.3
200
5.5
-0.3
-2.5
3.2
0.42
4.7
0.47
6.2
0.52
uA
V
MHz
pF
V
V
KΩ
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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