TRENCHSTOP
TM
Series
IKP04N60T
q
Low Loss DuoPack : IGBT in TRENCHSTOP
TM
and Fieldstop technology
with soft, fast recovery anti-parallel Emitter Controlled HE diode
•
•
•
•
•
C
•
•
•
•
•
•
•
Very low V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5µs
Designed for:
- Frequency Converters
- Drives
TM
TRENCHSTOP and Fieldstop technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
CE(sat)
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
1)
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
G
E
Type
IKP04N60T
V
CE
600V
I
C
4A
V
CE(sat),Tj=25°C
1.5V
T
j,max
175°C
Marking
K04T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage,
T
j
≥
25°C
DC collector current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area,
V
CE
= 600V,
T
j
= 175°C,
t
p
= 1µs
Diode forward current, limited by Tjmax
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
2)
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
t
SC
P
tot
T
j
T
stg
-
Value
600
9.5
6.5
12
12
9.5
6.5
12
±20
5
42
-40...+175
-55...+150
260
Unit
V
A
V
µs
W
°C
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150°C
Power dissipation
T
C
= 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1)
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.8 17.02.2016
TRENCHSTOP
TM
Series
IKP04N60T
q
Max. Value
Unit
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
Conditions
R
thJC
R
thJCD
R
thJA
3.5
5
62
K/W
Electrical Characteristic,
at
T
j
= 25°C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=0.2mA
V
GE
= 15V,
I
C
=4A
T
j
=25
°
C
T
j
=175
°
C
Diode forward voltage
V
GE
=0V,
I
F
=4A
V
F
V
GE(th)
T
j
=25
°
C
T
j
=175
°
C
Gate-emitter threshold voltage
Zero gate voltage collector current
I
C
= 60µA,
V
CE
=
V
GE
V
CE
=600V,
V
GE
=0V
I
CES
T
j
=25
°
C
T
j
=175
°
C
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=4A
-
-
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
Symbol
Conditions
Value
min.
600
-
-
-
-
4.1
Typ.
-
1.5
1.9
1.65
1.6
4.9
max.
-
2.05
-
Unit
V
2.05
-
5.7
-
-
-
2.2
-
40
1000
100
-
µA
I
GES
g
fs
R
G in t
-
-
nA
S
Ω
C
ies
C
oes
C
res
Q
Gate
L
E
V
CE
=25V,
V
GE
=0V,
f
=1MHz
V
CC
=480V,
I
C
=4A
V
GE
=15V
-
-
-
-
-
252
20
7.5
27
7
-
-
-
-
-
-
nC
nH
pF
I
C(SC)
V
G E
= 1 5 V ,
t
S C
≤
5
µs
V
CC
= 400V,
T
j
≤
150° C
-
36
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.8 17.02.2016
TRENCHSTOP
TM
Series
IKP04N60T
q
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
°C
,
V
R
= 4 00 V ,
I
F
= 4 A,
d i
F
/ d t
=6 1 0 A/
µs
-
-
-
-
28
79
5.3
346
-
-
-
-
ns
nC
A
A/µs
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 40 0 V,
I
C
= 4 A,
V
G E
= 0/ 15 V ,
R
G
= 4 7Ω ,
1)
L
σ
=1 5 0n H,
1)
C
σ
= 4 7p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
14
7
164
43
61
84
145
-
-
-
-
-
-
-
µJ
ns
Symbol
Conditions
Value
min.
Typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=175°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
1)
Symbol
Conditions
Value
min.
-
-
-
-
-
-
-
-
-
-
-
Typ.
14
10
185
83
99
97
196
95
291
6.6
253
max.
-
-
-
-
-
-
-
-
-
-
-
Unit
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 7 5° C,
V
C C
= 40 0 V,
I
C
= 4 A,
V
G E
= 0/ 15 V ,
R
G
= 4 7Ω
1)
L
σ
=1 5 0n H,
1)
C
σ
= 4 7p F
Energy losses include
“tail” and diode
reverse recovery.
T
j
=1 7 5° C
V
R
= 4 00 V ,
I
F
= 4 A,
d i
F
/ d t
=6 1 0 A/
µs
ns
µJ
ns
nC
A
A/µs
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3
Rev. 2.8 17.02.2016
TRENCHSTOP
TM
Series
IKP04N60T
q
t
p
=2µs
12A
10A
T
C
=80°C
8A
T
C
=110°C
6A
4A
2A
0A
10H z
10A
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
10µs
1A
50µs
I
c
I
c
100H z
1kH z
10kH z
100kH z
0.1A
1ms
DC
10ms
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
175°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/15V,
R
G
= 47Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤175°C;
V
GE
=0/15V)
40W
8A
P
tot
,
POWER DISSIPATION
I
C
,
COLLECTOR CURRENT
50°C
75°C
100°C 125°C 150°C
30W
6A
20W
4A
10W
2A
0W
25°C
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
≤
175°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≥
15V,
T
j
≤
175°C)
IFAG IPC TD VLS
4
Rev. 2.8 17.02.2016
TRENCHSTOP
TM
Series
IKP04N60T
q
10A
10A
I
C
,
COLLECTOR CURRENT
15V
6A
13V
11V
9V
4A
7V
I
C
,
COLLECTOR CURRENT
8A
V
G E
=20V
8A
V
G E
=20V
15V
6A
13V
11V
9V
4A
7V
2A
2A
0A
0V
1V
2V
3V
0A
0V
1V
2V
3V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
j
= 175°C)
V
CE(sat),
COLLECTOR
-
EMITT SATURATION VOLTAGE
2.5V
8A
I
C
=8A
I
C
,
COLLECTOR CURRENT
2.0V
6A
1.5V
I
C
=4A
I
C
=2A
4A
1.0V
2A
T
J
= 1 7 5 °C
2 5 °C
0.5V
0A
0V
2V
4V
6V
8V
0.0V
0°C
50°C
100°C
150°C
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
GE
= 15V)
IFAG IPC TD VLS
5
Rev. 2.8 17.02.2016
Special Edition for Assessment Centres
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