RN1102ACT(TPL3) datasheet, PDF

RN1102ACT(TPL3): DescriptionTRANS PREBIAS NPN 0.1W CST3; CategoryDiscrete semiconductor The transistor; File Size562KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1102ACT(TPL3) Overview

TRANS PREBIAS NPN 0.1W CST3

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.08 A
Minimum DC current gain (hFE)	50
Number of components	1
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.1 W
surface mount	YES
Transistor component materials	SILICON

	RN1102ACT(TPL3)	RN1103,LF(CT	RN1101CT(TPL3)	RN1103ACT(TPL3)	RN1101,LF(CT	RN1104T5LFT	RN1102T5LFT
Description	TRANS PREBIAS NPN 0.1W CST3	TRANS PREBIAS NPN 0.1W SSM	TRANS PREBIAS NPN 0.05W CST3	TRANS PREBIAS NPN 0.1W CST3	TRANS PREBIAS NPN 0.1W SSM	TRANS PREBIAS NPN 0.1W SSM	TRANS PREBIAS NPN 0.1W SSM
Transistor type	-	NPN - Pre-biased	-	-	NPN - Pre-biased	NPN - Pre-biased	NPN - Pre-biased
Current - Collector (Ic) (Maximum)	-	100mA	-	-	100mA	100mA	100mA
Voltage - collector-emitter breakdown (maximum)	-	50V	-	-	50V	50V	50V
Resistor - Substrate (R1)	-	22 kOhms	-	-	4.7 kOhms	47 kOhms	10 kOhms
Resistor - Emitter Base (R2)	-	22 kOhms	-	-	4.7 kOhms	47 kOhms	10 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)	-	70 @ 10mA，5V	-	-	30 @ 10mA，5V	80 @ 10mA，5V	50 @ 10mA，5V
Vce saturation value (maximum value) when different Ib,Ic	-	300mV @ 250µA，5mA	-	-	300mV @ 250µA，5mA	300mV @ 250µA，5mA	300mV @ 250µA，5mA
Current - collector cutoff (maximum)	-	500nA	-	-	500nA	500nA	500nA
Frequency - Transition	-	250MHz	-	-	250MHz	250MHz	250MHz
Power - Max	-	100mW	-	-	100mW	100mW	100mW
Installation type	-	surface mount	-	-	surface mount	surface mount	surface mount
Package/casing	-	SC-75，SOT-416	-	-	SC-75，SOT-416	SC-75，SOT-416	SC-75，SOT-416
Supplier device packaging	-	SSM	-	-	SSM	SSM	SSM

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