Composite Transistors
XP2401
Silicon PNP epitaxial planer transistor
Unit: mm
2.1±0.1
0.425
1.25±0.1
0.425
0.2±0.05
0.12
– 0.02
+0.05
For general amplification
0.65
s
Features
q
q
Two elements incorporated into one package.
(Base-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
2.0±0.1
1
2
3
5
0.65
4
0.9± 0.1
q
2SB709A
×
2 elements
0.7±0.1
s
Basic Part Number of Element
0.2
0 to 0.1
0.2±0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–60
–50
–7
–100
–200
150
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1 : Emitter (Tr1)
2 : Base
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol:
7R
Internal Connection
1
2
3
4
Tr1
5
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
CE
= –10V, I
C
= –2mA
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
160
0.5
0.99
– 0.3
80
2.7
– 0.5
V
MHz
pF
min
–60
–50
–7
– 0.1
–100
460
typ
max
Unit
V
V
V
µA
µA
Ratio between 2 elements
1
Composite Transistors
P
T
— Ta
250
–60
Ta=25˚C
I
B
=–300µA
XP2401
I
C
— V
CE
–60
V
CE
= – 5V
Ta=25˚C
–50
I
C
— I
B
Total power dissipation P
T
(mW)
Collector current I
C
(mA)
–250µA
–40
–200µA
–30
Collector current I
C
(mA)
200
–50
–40
150
–150µA
–30
100
–20
–100µA
–20
50
–10
–50µA
–10
0
0
20
40
60
80 100 120 140 160
0
0
–2 –4 –6 –8 –10 –12 –14 –16 –18
0
0
–100
–200
–300
–400
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(
µA
)
I
B
— V
BE
–400
–350
V
CE
= – 5V
Ta=25˚C
–200
–240
I
C
— V
BE
–10
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
V
CE
=–5V
I
C
/I
B
=10
25˚C
Ta=75˚C
–25˚C
–3
–1
–0.3
–0.1
–0.03
–0.01
25˚C
Ta=75˚C
Base current I
B
(
µA
)
–300
–250
–200
–150
–100
–50
0
0
–0.4
–0.8
–1.2
–1.6
Collector current I
C
(mA)
–160
–25˚C
–120
–80
–40
–0.003
–0.001
–1
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
–3
–10
–30
–100 –300 –1000
Base to emitter voltage V
BE
(V)
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA)
h
FE
— I
C
600
V
CE
= –10V
160
V
CB
=–10V
Ta=25˚C
f
T
— I
E
8
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
f=1MHz
I
E
=0
Ta=25˚C
Forward current transfer ratio h
FE
500
Transition frequency f
T
(MHz)
140
120
100
80
60
40
20
7
6
5
4
3
2
1
0
–1
400
Ta=75˚C
300
25˚C
–25˚C
200
100
0
–1
–3
–10
–30
–100 –300 –1000
0
0.1
0.3
1
3
10
30
100
–2 –3 –5
–10
–20 –30 –50 –100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
2
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