MOSFET 2N-CH 30V 9A/7.3A 8SOIC
Parameter Name | Attribute value |
FET type | 2 N-channel (dual) |
FET function | logic level gate |
Drain-source voltage (Vdss) | 30V |
Current - Continuous Drain (Id) at 25°C | - |
Rds On (maximum value) when different Id, Vgs | 15.8 milliohms @ 9A, 10V |
Vgs (th) (maximum value) when different Id | 2.4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) | 31nC @ 10V |
Input capacitance (Ciss) at different Vds (maximum value) | 1885pF @ 15V |
Power - Max | 2W |
Operating temperature | -55°C ~ 150°C(TJ) |
Installation type | surface mount |
Package/casing | 8-SOIC (0.154", 3.90mm wide) |
Supplier device packaging | 8-SO |