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IAUT300N10S5N015ATMA1

Description
100V 300A 1.5MOHM TOLL
Categorysemiconductor    Discrete semiconductor   
File Size216KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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100V 300A 1.5MOHM TOLL

IAUT300N10S5N015ATMA1 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)100V
Current - Continuous Drain (Id) at 25°C300A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)6V,10V
Rds On (maximum value) when different Id, Vgs1.5 milliohms @ 100A, 10V
Vgs (th) (maximum value) when different Id3.8V @ 275µA
Gate charge (Qg) at different Vgs (maximum value)216nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)16011pF @ 50V
FET function-
Power dissipation (maximum)375W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingPG-HSOF-8-1
Package/casing8-PowerSFN

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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